Light emission and floating gate memory characteristics of germanium nanocrystals

Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 3, 2011, Pages 635-638

  Das, Samaresh ^a   Manna, Santanu ^a   Singha, Rajkumar ^a   Anopchenko, Aleksei ^b   Daldosso, Nicola ^b   Pavesi, Lorenzo ^b   Dhar, Achintya ^a   Ray, Samit Kumar ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

^b UNIVERSITY OF TRENTO   (Italy)

Author keywords

charge injection; electroluminescence; germanium; nanocrystals

Indexed keywords

CAPACITANCE; CHARGE INJECTION; FLASH MEMORY; GERMANIUM; LIGHT; LIGHT EMISSION; METAL INSULATOR BOUNDARIES; MIS DEVICES; NANOCRYSTALS;

CAPACITANCE VOLTAGE MEASUREMENTS; ELECTRON TRAPPING; ELECTRON-HOLE RECOMBINATION; FLOATING GATE MEMORY; GERMANIUM NANOCRYSTALS; HYSTERESIS BEHAVIOUR; METAL-INSULATOR-SEMICONDUCTORS; TRANSMISSION ELECTRON MICROGRAPH;

ELECTROLUMINESCENCE;

EID: 79952503530     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201000408     Document Type: Article

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