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Volumn 519, Issue 17, 2011, Pages 5771-5774
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Nonvolatile memory characteristics of solution-processed oxide thin-film transistors using Ag nanoparticles
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Author keywords
Nanoparticles; Nonvolatile memory; Oxide semiconductor; Solution process; Thin film transistor
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Indexed keywords
ACTIVE CHANNELS;
AG NANOPARTICLE;
ELECTRON TRAPPING;
GATE VOLTAGES;
MEMORY FUNCTIONS;
MEMORY WINDOW;
NON-VOLATILE MEMORIES;
NONVOLATILE MEMORY;
NONVOLATILE MEMORY DEVICES;
OXIDE SEMICONDUCTOR;
POTENTIAL APPLICATIONS;
SOLUTION PROCESS;
SOLUTION-PROCESSED;
SOURCE AND DRAIN ELECTRODES;
TRANSFER CHARACTERISTICS;
CHARGE TRAPPING;
GATE DIELECTRICS;
GATES (TRANSISTOR);
NANOPARTICLES;
NONVOLATILE STORAGE;
SEMICONDUCTING ORGANIC COMPOUNDS;
SILICON COMPOUNDS;
THIN FILM DEVICES;
THIN FILM TRANSISTORS;
TRANSISTORS;
SILVER;
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EID: 79958010827
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2010.12.202 Document Type: Conference Paper |
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Times cited : (6)
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References (19)
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