Memory characteristics and the tunneling mechanism of Au nanocrystals embedded in a DyScO3 high-k gate dielectric layer

Semiconductor Science and Technology

Volumn 26, Issue 2, 2011, Pages

  Chan, K C ^a   Lee, P F ^a   Li, D F ^a   Dai, J Y ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ALTERNATIVE APPROACH; AU NANOCRYSTALS; CHARGING EFFECT; DIELECTRIC LAYER; FLOATING GATE MEMORIES; HIGH-K GATE DIELECTRIC LAYER; MEMORY WINDOW; THRESHOLD VOLTAGE SHIFTS; TRILAYERS; TUNNELING MECHANISM;

DEPOSITION; GATE DIELECTRICS; GATES (TRANSISTOR); GOLD COATINGS; NANOCRYSTALS; PULSED LASER DEPOSITION; PULSED LASERS; THIN FILMS; THRESHOLD VOLTAGE; VAPOR DEPOSITION;

GOLD;

EID: 79551701010     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/2/025015     Document Type: Article

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