Operation mechanism of Schottky barrier nonvolatile memory with high conductivity InGaZnO active layer

Applied Physics Letters

Volumn 100, Issue 14, 2012, Pages

  Trinh, Thanh Thuy ^a,b   Nguyen, Van Duy ^c   Nguyen, Hong Hanh ^a   Raja, Jayapal ^a   Jang, Juyeon ^a   Jang, Kyungsoo ^a   Baek, Kyunghyun ^a   Dao, Vinh Ai ^a,b   Yi, Junsin ^a  

^a Sungkyunkwan University   (South Korea)

^b VIETNAM NATIONAL UNIVERSITY   (Viet Nam)

^c HANOI UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Viet Nam)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; DISCHARGING PROCESS; HIGH CONDUCTIVITY; MEMORY WINDOW; NON-VOLATILE MEMORIES; NONVOLATILE MEMORY DEVICES; OPERATION MECHANISM; OPERATION VOLTAGE; PROGRAMMING VOLTAGE; SCHOTTKY BARRIERS; SCHOTTKY CONTACTS; SCHOTTKY DEVICES; SCHOTTKY-BARRIER DEVICES; SOURCE/DRAIN ELECTRODES; TRAPPED CHARGE;

NONVOLATILE STORAGE;

SCHOTTKY BARRIER DIODES;

EID: 84859798356     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3699221     Document Type: Article

References (16)

1. K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, Science 300, 1269 (2003).
2. H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, Appl. Phys. Lett. 89, 112123 (2006).
3. N. C. Su, S. J. Wang, and A. Chin, IEEE Electron Device Lett. 31, 201 (2010).
4. H. X Yin, S. N. Kim, H. Lim, Y. S. Min, C. J. Kim, I. H. Song, J. C Park, S. W. Kim, A. Tikhonovsky, J. W Hyun, and Y. S Park, IEEE Trans. Electron Devices 55, 2071 (2008).
5. Y. S. Park, S. Y. Lee, and J. S. Lee, IEEE Electron Device Lett. 31, 1134 (2010).
6. J. H. Yang, C. G. Ahn, I. B. Baek, M. G. Jang, G. Y. Sung, B. C. Park, K. J. Im, and S. J. Lee, Thin Solid Films 517, 1825-1828 (2009).
7. J. W. Shin, W. J. Cho, C. J. Choi, and M. G. Jang, Appl. Phys. Lett. 94, 053502 (2009).
8. J. W. Shin, C. J. Choi, M. G. Jang, and W. J. Cho, IEEE Electron Device Lett. 29, 1336 (2008).
9. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature 432, 488-492 (2004).
10. H. H. Nguyen, V. D. Nguyen, T. T. Trinh, K. S. Jang, K. H Baek, J. Raja, and J. S Yi, J. Electrochem. Soc. 158(10), H1077 (2011).
11. N. V. Duy, S. W. Jung, K. Kim, D. N. Son, N. T. Nga, J. Cho, B. Choi, and J. Yi, J. Phys. D: Appl. Phys. 43, 075101 (2010).
12. CRC Handbook of Chemistry and Physics, edited by David R. Lide, 89th ed. (Internet Version, 2009), pp. 12-114.
13. P. S. Yun, and J. Koike, J. Electrochem. Soc. 158(10), H1034-H1040 (2011).
14. K. W. Lee, K. Y Heo, and H. J. Kim, Appl. Phys. Lett. 94, 102112 (2009).
15. K. H. Ji, J. I. Kim, H. Y. Jung, S. Y. Park, R. N. Choi, U. K. Kim, C. S. Hwang, D. S. Lee, H. S. Hwang, and J. K. Jeong, Appl. Phys. Lett. 98, 103509 (2011).
16. T. Y. Hsieh, T. C. Chang, T. C. Chen, M. Y. Tsai, W. H. Lu, S. C. Chen, F. Y. Jian, and C. S. Lin, Thin Solid Films 520, 1427-1431 (2011).