Nonvolatile amorphous-silicon thin-film-transistor memory structure for drain-voltage independent saturation current

IEEE Transactions on Electron Devices

Volumn 58, Issue 9, 2011, Pages 2924-2927

  Huang, Yifei ^a   Wagner, Sigurd ^a   Sturm, James C ^a  

^a Princeton University   (United States)

Author keywords

Amorphous silicon (a Si); nonvolatile memory; thin film transistor (TFT)

Indexed keywords

AMORPHOUS SILICON (A-SI); CAPACITIVE COUPLINGS; CRYSTALLINE SILICONS; DATA RETENTION TIME; DRAIN ELECTRODES; DRAIN VOLTAGE; FLOATING GATES; GATE INSULATOR; MEMORY STRUCTURE; NON-VOLATILE; NON-VOLATILE MEMORIES; ROOM TEMPERATURE; SATURATION CURRENT; TRAP CHARGE; TRAPPED CHARGE;

AMORPHOUS FILMS; DEFECT DENSITY; DRAIN CURRENT; SILICON; THIN FILM TRANSISTORS; TRANSISTORS;

AMORPHOUS SILICON;

EID: 80052090907     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2159609     Document Type: Article

References (12)

1. Y. Huang, S. Wagner, and J. C. Sturm, "High retention-time nonvolatile amorphous silicon TFT memory for static active matrix OLED display without pixel refresh," in Proc. Device Res. Conf., Jun. 2010, pp. 179-180
2. Y. Kuo and H. Nominanda, "Nonvolatile hydrogenated-amorphoussilicon thin-film-transistor memory devices," App. Phys. Lett., vol. 89, no. 17, pp. 173 503-1-173 503-3, Oct. 2006
3. Y. Huang, S. Wagner, and J. C. Sturm, "Amorphous silicon floating gate transistor," in Proc. 67th Annu. Device Res. Conf. Dig., Jun. 2009, pp. 135-136
4. K. H. Cherenack, A. Z. Kattamis, B. Hekmatshoar, J. C. Sturm, and S. Wagner, "Amorphous-silicon thin-film transistors fabricated at 300 °C on a free-standing foil substrate of clear plastic," IEEE Electron Device Lett., vol. 28, no. 11, pp. 1004-1006, Nov. 2007 (Pubitemid 350111795)
5. S. T. Wang, "On the I-V characteristics of floating-gate MOS transistors," IEEE Trans. Electron Devices, vol. ED-26, no. 9, pp. 1292-1293, Sep. 1979
6. K. Long, H. Gleskova, S. Wagner, and J. C. Sturm, "Active matrix OLED using 150 °C a-Si TFT backplane built on flexible plastic substrate," in Proc. SPIE, 2003, vol. 5080, p. 180
7. K. H. Cherenack, A. Z. Kattamis, I.-C. Cheng, and S. Wagner, "Backchannel passivated amorphous silicon TFTs fabricated at 300 °C on a clear plastic substrate," presented at the Materials Research Society Spring Meeting, San Francisco, CA, Apr. 8-13, 2007, Paper A17.3
8. S. J. Wrazien, Y. Zhao, J. D. Krayer, and M. White, " Characterization of SONOS oxynitride nonvolatile semiconductor memory devices," Solid State Electron., vol. 47, no. 5, pp. 885-891, May 2003
9. Y. Hu and M. H. White, "Charge retention in scaled SONOS nonvolatile semiconductor memory devices modeling and characterization," Solid State Electron., vol. 36, no. 10, pp. 1401-1416, Oct. 1993 (Pubitemid 23715177)
10. M. K. Cho and D. M. Kim, "High performance SONOS memory cells free of drain turn-on and over-erase: compatibility issue with current flash technology," IEEE Electron Device Lett., vol. 21, no. 8, pp. 399-401, Aug. 2000
11. M. J. Powell, "Charge trapping instabilities in amorphous silicon-silicon nitride thin-film transistors," Appl. Phys. Lett., vol. 43, no. 6, pp. 597-599, Sep. 1983
12. B. D. Salvo, G. Ghibaudo, G. Reimbold, F. Mondond, B. Guillaumot, and P. Candelier, "Experimental and theoretical investigation of nonvolatile memory data-retention," IEEE Trans. Electron Devices, vol. 46, no. 7, pp. 1518-1524, Jul. 1999.