Study of the relative performance of silicon and germanium nanoparticles embedded gate oxide in metal-oxide-semiconductor memory devices

Journal of Applied Physics

Volumn 109, Issue 6, 2011, Pages

  Chakraborty, G ^a   Sengupta, A ^b   Requejo, F G ^c   Sarkar, C K ^b  

^a FUTURE INSTITUTE OF ENGINEERING AND MANAGEMENT   (India)

^b JADAVPUR UNIVERSITY   (India)

^c INSTITUTO DE INVESTIGACIONES FISICOQUÍMICAS TEÓRICAS Y APLICADAS INIFTA   (Argentina)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED FIELD; DIRECT TUNNELING; FLOATING GATE MOS; FOWLER-NORDHEIM TUNNELING; GATE OXIDE; GE NANOPARTICLES; MEMORY DEVICE; METAL OXIDE SEMICONDUCTOR; ONSET VOLTAGES; RELATIVE PERFORMANCE; SILICON NANOPARTICLES; TUNNEL OXIDE]; TUNNELING CURRENT;

CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRIC FIELDS; EQUIPMENT; GATES (TRANSISTOR); GERMANIUM; MOS DEVICES; NANOPARTICLES; SEMICONDUCTING SILICON; SEMICONDUCTOR STORAGE; SILICON COMPOUNDS; SILICON OXIDES;

GATE DIELECTRICS;

EID: 79953665362     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3555087     Document Type: Article

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