SCOPUS 정보 검색 플랫폼

Volumn 95, Issue 26, 2009, Pages

Role of germanium in the reduced temperature dependence of Ti-based nanocrystals formation for nonvolatile memory applications

(8) Feng, Li Wei a Chang, Chun Yen a Chang, Ting Chang b,c Tu, Chun Hao a Wang, Pai Syuan a Chang, Yao Feng a Chen, Min Chen b Huang, Hui Chun b

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

c NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE CHARACTERISTIC; COSPUTTERING; DATA RETENTION; ELECTRICAL CHARACTERISTIC; LOW-TEMPERATURE APPLICATIONS; MORPHOLOGICAL INSTABILITY; NON-VOLATILE MEMORIES; NON-VOLATILE MEMORY APPLICATION; NONVOLATILE MEMORY DEVICES; REDUCED TEMPERATURE DEPENDENCE; THERMAL BUDGET; TITANIUM SILICIDE; X RAY PHOTONS;

AGGLOMERATION; EMISSION SPECTROSCOPY; NANOCRYSTALS; NONVOLATILE STORAGE; SILICIDES; TITANIUM; TRANSMISSION ELECTRON MICROSCOPY;

GERMANIUM;

EID: 73649096221 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3279131 Document Type: Article

Times cited : (21)

References (22)

1
- 15744392463
- Electron charging and discharging effects of tungsten nanocrystals embedded in silicon dioxide for low-voltage nonvolatile memory technology
- DOI 10.1149/1.1859674
- T. C. Chang, P. T. Liu, S. T. Yan, and S. M. Sze, Electrochem. Solid-State Lett. 1099-0062 8, G71 (2005). 10.1149/1.1859674 (Pubitemid 40407210)
- (2005) Electrochemical and Solid-State Letters , vol.8 , Issue.3
- Chang, T.C.¹ Liu, P.T.² Yan, S.T.³ Sze, S.M.⁴

2
- 2342475755
- 0003-6951. 10.1063/1.1697627
- T. C. Chang, S. T. Yan, C. H. Hsu, M. T. Tang, J. F. Lee, Y. H. Tai, P. T. Liu, and S. M. Sze, Appl. Phys. Lett. 0003-6951 84, 2581 (2004). 10.1063/1.1697627
- (2004) Appl. Phys. Lett. , vol.84 , pp. 2581
- Chang, T.C.¹ Yan, S.T.² Hsu, C.H.³ Tang, M.T.⁴ Lee, J.F.⁵ Tai, Y.H.⁶ Liu, P.T.⁷ Sze, S.M.⁸

3
- 27644467439
- 0003-6951. 10.1063/1.2126150
- P. H. Yeh, C. H. Yu, L. J. Chen, H. H. Wu, P. T. Liu, and T. C. Chang, Appl. Phys. Lett. 0003-6951 87, 193504 (2005). 10.1063/1.2126150
- (2005) Appl. Phys. Lett. , vol.87 , pp. 193504
- Yeh, P.H.¹ Yu, C.H.² Chen, L.J.³ Wu, H.H.⁴ Liu, P.T.⁵ Chang, T.C.⁶

4
- 17944366377
- Highly thermally stable TiN nanocrystals as charge trapping sites for nonvolatile memory device applications
- DOI 10.1063/1.1890481, 123110
- S. Choi, S. -S. Kim, M. Chang, H. Hwang, S. Jeon, and C. Kim, Appl. Phys. Lett. 0003-6951 86, 123110 (2005). 10.1063/1.1890481 (Pubitemid 40596938)
- (2005) Applied Physics Letters , vol.86 , Issue.12 , pp. 1-3
- Choi, S.¹ Kim, S.-S.² Chang, M.³ Hwang, H.⁴ Jeon, S.⁵ Kim, C.⁶

5
- 34547479883
- Physical and electrical characteristics of atomic layer deposited TiN nanocrystal memory capacitors
- DOI 10.1063/1.2766680
- S. Maikap, P. J. Tzeng, H. Y. Lee, C. C. Wang, T. C. Tien, L. S. Lee, and M. J. Tsai, Appl. Phys. Lett. 0003-6951 91, 043114 (2007). 10.1063/1.2766680 (Pubitemid 47174501)
- (2007) Applied Physics Letters , vol.91 , Issue.4 , pp. 043114
- Maikap, S.¹ Tzeng, P.J.² Lee, H.Y.³ Wang, C.C.⁴ Tien, T.C.⁵ Lee, L.S.⁶ Tsai, M.-J.⁷

6
- 34547874696
- 2 nanocrystal prepared by atomic-layer-deposition system for non-volatile memory application
- DOI 10.1143/JJAP.46.2523, Solid State Devices and Materials
- C. -H. Lin, C. -C. Wang, P. -J. Tzeng, S. Maikap, H. -Y. Lee, L. -S. Lee, and M. -J. Tsai, Jpn. J. Appl. Phys., Part 1 0021-4922 46, 2523 (2007). 10.1143/JJAP.46.2523 (Pubitemid 47256815)
- (2007) Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers , vol.46 , Issue.B , pp. 2523-2526
- Lin, C.-H.¹ Wang, C.-C.² Tzeng, P.-J.³ Maikap, S.⁴ Lee, H.-Y.⁵ Lee, L.-S.⁶ Tsai, M.-J.⁷

7
- 0035148201
- 0361-5235. 10.1007/s11664-001-0209-6
- B. Umapathi, S. Das, K. Lahiri, and S. Kal, J. Electron. Mater. 0361-5235 30, 17 (2001). 10.1007/s11664-001-0209-6
- (2001) J. Electron. Mater. , vol.30 , pp. 17
- Umapathi, B.¹ Das, S.² Lahiri, K.³ Kal, S.⁴

8
- 0001733426
- 0021-8979. 10.1063/1.359321
- D. B. Aldrich, Y. L. Chen, D. E. Sayers, R. J. Nemanich, S. P. Ashburn, and M. C. Ozturk, J. Appl. Phys. 0021-8979 77, 5107 (1995). 10.1063/1.359321
- (1995) J. Appl. Phys. , vol.77 , pp. 5107
- Aldrich, D.B.¹ Chen, Y.L.² Sayers, D.E.³ Nemanich, R.J.⁴ Ashburn, S.P.⁵ Ozturk, M.C.⁶

9
- 0027906671
- 0169-4332. 10.1016/0169-4332(93)90168-B
- N. Boutarek and R. Madar, Appl. Surf. Sci. 0169-4332 73, 209 (1993). 10.1016/0169-4332(93)90168-B
- (1993) Appl. Surf. Sci. , vol.73 , pp. 209
- Boutarek, N.¹ Madar, R.²

10
- 0025463231
- 0884-2914. 10.1557/JMR.1990.1453
- O. Thomas, F. M. d'Heurle, and S. Delage, J. Mater. Res. 0884-2914 5, 1453 (1990). 10.1557/JMR.1990.1453
- (1990) J. Mater. Res. , vol.5 , pp. 1453
- Thomas, O.¹ D'Heurle, F.M.² Delage, S.³

11
- 0016555365
- 0022-5088. 10.1016/0022-5088(75)90005-3
- Y. Pauleau and J. -C. J. Remy, J. Less-Common Met. 0022-5088 42, 199 (1975). 10.1016/0022-5088(75)90005-3
- (1975) J. Less-Common Met. , vol.42 , pp. 199
- Pauleau, Y.¹ Remy, J.-C.J.²

12
- 2342467454
- 0361-5235. 10.1007/s11664-004-0144-4
- J. Oh and J. C. Campbell, J. Electron. Mater. 0361-5235 33, 364 (2004). 10.1007/s11664-004-0144-4
- (2004) J. Electron. Mater. , vol.33 , pp. 364
- Oh, J.¹ Campbell, J.C.²

13
- 0031998102
- 0021-4922. 10.1143/JJAP.37.L122
- L. -P. Chen, Y. -C. Chan, S. -J. Chang, G. -W. Huang, and C. -Y. Chang, Jpn. J. Appl. Phys., Part 2 0021-4922 37, L122 (1998). 10.1143/JJAP.37.L122
- (1998) Jpn. J. Appl. Phys., Part 2 , vol.37 , pp. 122
- Chen, L.-P.¹ Chan, Y.-C.² Chang, S.-J.³ Huang, G.-W.⁴ Chang, C.-Y.⁵

14
- 0024038071
- 0142-2421. 10.1002/sia.740120507
- J. Finster, Surf. Interface Anal. 0142-2421 12, 309 (1988). 10.1002/sia.740120507
- (1988) Surf. Interface Anal. , vol.12 , pp. 309
- Finster, J.¹

15
- 73649117322
- 0031-8949. 10.1088/0031-8949/41/6/074
- Z. Youdou, Z. Rong, H. Liquan, M. Shuiyuan, L. Xuenin, and Z. Peixin, Phys. Scr. 0031-8949 41, 1041 (1990). 10.1088/0031-8949/41/6/074
- (1990) Phys. Scr. , vol.41 , pp. 1041
- Youdou, Z.¹ Rong, Z.² Liquan, H.³ Shuiyuan, M.⁴ Xuenin, L.⁵ Peixin, Z.⁶

16
- 0000311395
- 0163-1829. 10.1103/PhysRevB.53.16279
- D. B. Aldrich, F. M. d'Heurle, D. E. Sayers, and R. J. Nemanich, Phys. Rev. B 0163-1829 53, 16279 (1996). 10.1103/PhysRevB.53.16279
- (1996) Phys. Rev. B , vol.53 , pp. 16279
- Aldrich, D.B.¹ D'Heurle, F.M.² Sayers, D.E.³ Nemanich, R.J.⁴

17
- 84968376613
- 0369-4577, () (in Japanese).
- H. Noda, K. Oikawa, T. Ogata, K. Matsuki, and H. Kamada, Nippon Kagaku Kaishi 0369-4577 8, 1084 (1986) (in Japanese).
- (1986) Nippon Kagaku Kaishi , vol.8 , pp. 1084
- Noda, H.¹ Oikawa, K.² Ogata, T.³ Matsuki, K.⁴ Kamada, H.⁵

18
- 33646901047
- Microstructural evolution of metal-insulator-metal capacitor prepared by atomic-layer-deposition system at elevated temperature
- DOI 10.1143/JJAP.45.3036
- C. H. Lin, C. C. Wang, P. J. Tzeng, C. S. Liang, W. M. Lo, H. Y. Li, L. S. Lee, S. C. Lo, Y. W. Chou, and M. J. Tsai, Jpn. J. Appl. Phys., Part 1 0021-4922 45, 3036 (2006). 10.1143/JJAP.45.3036 (Pubitemid 43794137)
- (2006) Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers , vol.45 , Issue.B , pp. 3036-3039
- Lin, C.H.¹ Wang, C.C.² Tzeng, P.J.³ Liang, C.S.⁴ Lo, W.M.⁵ Li, H.Y.⁶ Lee, L.S.⁷ Lo, S.C.⁸ Chou, Y.W.⁹ Tsai, M.J.¹⁰

19
- 4344641973
- 0272-8842. 10.1016/j.ceramint.2003.12.042
- J. M. Wang, W. G. Liu, and T. Mei, Ceram. Int. 0272-8842 30, 1921 (2004). 10.1016/j.ceramint.2003.12.042
- (2004) Ceram. Int. , vol.30 , pp. 1921
- Wang, J.M.¹ Liu, W.G.² Mei, T.³

20
- 20844456242
- 3 high- k dielectrics
- DOI 10.1063/1.1926414, 203111
- X. B. Lu, P. F. Lee, and J. Y. Dai, Appl. Phys. Lett. 0003-6951 86, 203111 (2005). 10.1063/1.1926414 (Pubitemid 40861047)
- (2005) Applied Physics Letters , vol.86 , Issue.20 , pp. 1-3
- Lu, X.B.¹ Lee, P.F.² Dai, J.Y.³

21
- 20944446360
- 2 by ion implantation and annealing
- DOI 10.1063/1.1909286, 104330
- S. Duguay, J. J. Grob, A. Slaoui, Y. Le Gall, and M. Amann-Liess, J. Appl. Phys. 0021-8979 97, 104330 (2005). 10.1063/1.1909286 (Pubitemid 40866137)
- (2005) Journal of Applied Physics , vol.97 , Issue.10 , pp. 1-5
- Duguay, S.¹ Grob, J.J.² Slaoui, A.³ Le Gall, Y.⁴ Amann-Liess, M.⁵

22
- 3042822401
- 0003-6951. 10.1063/1.1757022
- T. H. Ng, W. K. Chim, W. K. Choi, V. Ho, L. W. Teo, A. Y. Du, and C. H. Tung, Appl. Phys. Lett. 0003-6951 84, 4385 (2004). 10.1063/1.1757022
- (2004) Appl. Phys. Lett. , vol.84 , pp. 4385
- Ng, T.H.¹ Chim, W.K.² Choi, W.K.³ Ho, V.⁴ Teo, L.W.⁵ Du, A.Y.⁶ Tung, C.H.⁷

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.