Interfacial microstructure and electrical properties of HfAlOx thin films on compressively strained Si83Ge17 grown by RF magnetron sputtering

Microelectronic Engineering

Volumn 86, Issue 11, 2009, Pages 2247-2250

  Qiu, X Y ^a,b   Chan, K C ^b   Lee, P F ^b   Dong, X W ^c   Dai, J Y ^b  

^a SOUTHWEST UNIVERSITY   (China)

^b HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

^c NANJING UNIVERSITY   (China)

Author keywords

HfAlOx films; Hysteresis; Interfacial microstructure; RF magnetron sputtering

Indexed keywords

C-V HYSTERESIS; CAPACITANCE VOLTAGE; DEPTH PROFILE; ELECTRICAL PROPERTY; HFALOX FILMS; INTERFACIAL DEFECT; INTERFACIAL LAYER; INTERFACIAL MICROSTRUCTURE; RF MAGNETRON SPUTTERING; SI SUBSTRATES; STRAINED-SI; TRAPPED CHARGE;

ELECTRIC POTENTIAL; GERMANIUM; HAFNIUM COMPOUNDS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HYSTERESIS; MAGNETRON SPUTTERING; MAGNETRONS; MICROSTRUCTURE; NANOPARTICLES; OXYGEN; OXYGEN VACANCIES; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 69549103091     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.130     Document Type: Article

References (21)

1. Wilk G.D., Wallace R.M., and Anthony J.M. J. Appl. Phys. 89 (2001) 5243
2. W.J. Qi, R. Nieh, B.H. Lee, K. Onishi, L. Kang, Y. Jeon, J.C. Lee, V. Kaushik, B.Y. Nguyen, L. Prabhu, et al., in: Technical Digest VLSI Symposium, 2000, p. 40.
3. C.H. Lee, H.F. Luan, W.P. Bai, S.J. Lee, T.S. Jeon, Y. Senzaki, D. Roberts, D.L. Kwong, in: Technical Digest International Electron Devices Meet, 2000, p. 27.
4. D.G. Park, H.J. Cho, C. Lim, I.S. Yeo, J.S. Roh, C.T. Kim, J.M. Hwang, in: Technical Digest VLSL Symposium, 2000, p. 46
5. Copel M., Gribelyuk M.A., and Gusev. Appl. Phys. Lett. 76 (2000) 436
6. Zhao C., Richard O., Bender H., Caymax M., De Gendt S., Heyns M., Young E., Roebben G., Van Der Biest O., and Haukka S. Appl. Phys. Lett. 80 (2002) 2374
7. Zhu J., Liu Z.G., and Feng Y. J. Phys. D 36 (2003) 3051
8. Mikhelashvili V., Brener R., Kreinin O., Meyler B., Shneider J., and Eisenstein G. Appl. Phys. Lett. 85 (2004) 5950
9. Lee J.-H., Maikap S., Kim D.-Y., Mahapatra R., Ray S.K., and No Y.S. Appl. Phys. Lett. 83 (2003) 779
10. Damlencourt J.-F., Weber O., Renault O., Hartmann J.-M., Poggi C., Ducroquet F., and Billon T. J. Appl. Phys. 96 (2004) 5478
11. Lee M.L., Fitzgerald E.A., Bulsara M.T., Currie M.T., and Lochtefeld A. J. Appl. Phys. 97 (2005) 011101
12. A. Chin, Y.H. Wu, S.B. Chen, C.C. Liao, W.J. Chen, in: Technical Digest VLSI Symposium, 2000, p. 16.
13. Lin Y.-S., Puthenkovilakam R., and Chang J.P. Appl. Phys. Lett. 81 (2002) 2041
14. Mikhelashvili V., Brener R., Kreinin O., Meyler B., Shneider J., and Eisenstein G. Appl. Phys. Lett. 85 (2004) 5950
15. Kim H., McIntyre P.C., Chui C.O., Saraswat K.C., and Cho M.-H. Appl. Phys. Lett. 85 (2004) 2902
16. Wang J.C., Shie D.C., Lei T.F., and Lee C.L. Appl. Phys. Lett. 84 (2004) 1531
17. Curreem K.K.S., Lee P.F., Wong K.S., Dai J.Y., Zhou M.J., and Wang J. Appl. Phys. Lett. 88 (2006) 182905
18. Kim L., Kim J., Jung D., and Roh Y. Appl. Phys. Lett. 76 (2000) 1881
19. Wang J.C., Chiao S.H., Lee C.L., Lei T.F., Lin Y.M., Wang M.F., Chen S.C., Yu C.H., and Liang M.S. J. Appl. Phys. 92 (2002) 3936
20. Bhat N., and Saraswat K.C. J. Appl. Phys. 84 (1998) 2722
21. Kukli K., Ritala M., Sajavaara T., Keinonen J., and Leskelä M. Thin Solid Films 416 (2002) 72