Phase separation enhanced interfacial reactions in complex high-k dielectric films

Integrated Ferroelectrics

Volumn 86, Issue 1, 2006, Pages 13-19

  Qiu, X Y ^a   Gao, F ^b   Liu, H W ^b   Zhu, J S ^b   Liu, J M ^b  

^a SOUTHWEST UNIVERSITY   (China)

^b NANJING UNIVERSITY   (China)

Author keywords

High k dielectric film; Interfacial reaction; Phase separation

Indexed keywords

AMORPHOUS MATRICES; DEPOSITED FILMS; ELECTRICAL PERFORMANCE; HIGH-K DIELECTRIC FILM; HIGH-K DIELECTRIC FILMS; HIGH-TEMPERATURE ANNEALING; INTERFACIAL LAYER; INTERFACIAL REACTION; INTERFACIAL REACTIONS; MICROSTRUCTURAL CHARACTERISTICS; NANO-SCALE PHASE SEPARATION; NANO-SIZED CRYSTALS; NONSTOICHIOMETRIC; OUTER LAYER; SI SUBSTRATES;

AMORPHOUS SILICON; DIELECTRIC DEVICES; DIELECTRIC FILMS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; PHASE INTERFACES; PHASE MODULATION; PHASE SEPARATION; PULSED LASER DEPOSITION; SILICATES; SILICIDES; X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS FILMS;

EID: 65949106356     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/10584580601085602     Document Type: Article

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