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Japanese Journal of Applied Physics

Volumn 50, Issue 9 PART 1, 2011, Pages

Multilevel charge storage in a multiple alloy nanodot memory

(6) Lee, Gae Hun a Lee, Jung Min a Song, Yun Heub a Bea, Ji Chel b Tanaka, Tetsu b Koyanagi, Mitsumasa b

a Hanyang University (South Korea)

b TOHOKU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DOT SIZE; FEPT ALLOYS; FLOATING GATES; GATE VOLTAGES; MEMORY STRUCTURE; MEMORY WINDOW; METAL-OXIDE- SEMICONDUCTORCAPACITORS; MULTILEVEL CELL; MULTILEVEL CHARGES; MULTIPLE ALLOY; NAND FLASH MEMORY; NANO-DOT MEMORY; NANODOTS; RETENTION CHARACTERISTICS;

CERIUM ALLOYS; FLASH MEMORY; METALLIC COMPOUNDS; MOS CAPACITORS; NANOSTRUCTURED MATERIALS;

IRON ALLOYS;

EID: 80053004252 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.50.095001 Document Type: Article

Times cited : (5)

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