Memory characteristics of Co nanocrystal memory device with HfO2 as blocking oxide

Applied Physics Letters

Volumn 90, Issue 13, 2007, Pages

  Yang, F M ^a   Chang, T C ^b,c   Liu, P T ^a   Yeh, P H ^d   Yu, Y C ^e   Lin, J Y ^e   Sze, S M ^a   Lou, J C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^d NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^e NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT; DATA STORAGE EQUIPMENT; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; ELECTRON TUNNELING; ROBUSTNESS (CONTROL SYSTEMS);

MEMORY WINDOW; RETENTION CHARACTERISTICS;

NANOCRYSTALS;

EID: 34047121233     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2716845     Document Type: Article

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