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Volumn 99, Issue 7, 2011, Pages

Charge storage characteristics of ultra-small Pt nanoparticle embedded GaAs based non-volatile memory

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; CAPACITANCE VOLTAGE MEASUREMENTS; CHARGE STORAGE CHARACTERISTIC; DEVICE APPLICATION; EMBEDDED DEVICE; GAAS; MEMORY WINDOW; NANOPARTICLE ARRAY; NON-VOLATILE MEMORIES; NONVOLATILE MEMORY DEVICES; PARTICLE DENSITIES; PT NANOPARTICLES; RETENTION CHARACTERISTICS; TARGET SPUTTERING; ULTRA-SMALL;

EID: 80052101141     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3625426     Document Type: Article
Times cited : (65)

References (19)
  • 15
    • 0036714604 scopus 로고    scopus 로고
    • Metal nanocrystal memories - Part I: Device design and fabrication
    • DOI 10.1109/TED.2002.802617, PII 1011092002802617
    • Z. Liu, C. Lee, V. Narayanan, G. Pei, and E. C. Kan, IEEE Trans. Electron Devices 49 (9), 1606 (2002). 10.1109/TED.2002.802617 (Pubitemid 35017147)
    • (2002) IEEE Transactions on Electron Devices , vol.49 , Issue.9 , pp. 1606-1613
    • Liu, Z.1    Lee, C.2    Narayanan, V.3    Pei, G.4    Kan, E.C.5
  • 16
  • 18
    • 33745795081 scopus 로고    scopus 로고
    • Room-temperature Coulomb blockade effect in silicon quantum dots in silicon nitride films
    • DOI 10.1063/1.2219722
    • C.-H. Cho, B.-H. Kim, and S.-J. Park, Appl. Phys. Lett. 89, 013116 (2006). 10.1063/1.2219722 (Pubitemid 44025449)
    • (2006) Applied Physics Letters , vol.89 , Issue.1 , pp. 013116
    • Cho, C.-H.1    Kim, B.-H.2    Park, S.-J.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.