Memory characteristics of Pt nanoparticle-embedded MOS capacitors fabricated at room temperature

Transactions on Electrical and Electronic Materials

Volumn 13, Issue 3, 2012, Pages 162-164

  Kim, Sungsu ^a   Cho, Kyoungah ^a   Kwak, Kiyeol ^a   Kim, Sangsig ^a  

^a Korea University   (South Korea)

Author keywords

Memory; Nanoparticle; Pt; Sputter

Indexed keywords

AVERAGE SIZE; CAPACITANCE-VOLTAGE CURVE; HIGH FREQUENCY HF; OXIDE LAYER; PT NANOPARTICLES; ROOM TEMPERATURE; SPUTTER;

DATA STORAGE EQUIPMENT; DIELECTRIC DEVICES; NANOPARTICLES; PLATINUM;

MOS CAPACITORS;

EID: 84862680995     PISSN: 12297607     EISSN: 20927592     Source Type: Journal    
DOI: 10.4313/TEEM.2012.13.3.162     Document Type: Article

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