Direct tunneling and storage of electrons in Ni nanocrystals embedded within MOS structure

Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering

Volumn 41, Issue 1, 2012, Pages 1-4

  Ni, Henan ^a,b   Wu, Liangcai ^c   Song, Zhitang ^c   Hui, Chun ^a  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

^b Shao Xing University   (China)

^c SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

Charge storage properties; MOS structure; Nanocrystal memory; Ni NCs

Indexed keywords

AVERAGE SIZE; CAPACITOR STRUCTURES; CHARGE STORAGE; DIRECT TUNNELING; E BEAM EVAPORATION; FREQUENCY-DEPENDENT CAPACITANCE; GATE OXIDE; HIGH FREQUENCY HF; METAL OXIDE SEMICONDUCTOR; MOS STRUCTURE; NANOCRYSTAL MEMORY; NANOCRYSTAL NONVOLATILE MEMORIES;

NANOCRYSTALS; NONVOLATILE STORAGE; RAPID THERMAL ANNEALING; SEMICONDUCTOR STORAGE;

MOS DEVICES;

EID: 84857074984     PISSN: 1002185X     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (23)

1. Tiwari S, Rana F, Hanafi H et al. Appl Phys Lett[J], 1996, 68: 1377
2. Hanafi H I, Tiwari S, Khan I. IEEE Trans Electron Devices[J], 1996, 43: 1553
3. Tiwari S, Rana F, Chan K et al. Appl Phys Lett[J], 1996, 69: 1232
4. Gonzalez-Varona O, Garrido B, Cheylan S et al. Appl Phys Lett[J], 2003, 82: 2151
5. Lee C, Gorur-Seetharam A, Kan E C. Tech Dig- Int Electron Devices Meet[C]. 2003: 557
6. Tseng J Y, Cheng C W, Wang S Y et al. Appl Phys Lett[J], 2004, 85: 2595
7. Liu Z, Lee C, Narayanan V et al. IEEE Trans Electron Devices[J], 2002, 49: 1606
8. Liu Z, Lee C, Narayanan V et al. IEEE Trans Electron Devices[J], 2003, 49: 1614
9. Maikap S, Tzeng P J, Lee H Y et al. Appl Phys Lett[J], 2007, 91: 043114
10. Corso D, Mure G, Lombardo S et al. Appl Phys Lett[J], 2008, 92: 203503
11. Yeh P H, Chen L J, Liu P T et al. Elecrochimica Acta[J], 2007, 52: 2920
12. Lee C, Meteer J, Narayanan V et al. J Electronic Materials[J], 2005, 34(1): 1
13. Lee C, Hou T H, Kan E C C. IEEE Trans Elec Dev[J], 2005, 52(12): 269722702
14. Wang C C, Tseng J Y, Wu T B et al. J Appl Phys[J], 2006, 99(2): 026102
15. Jong Jin Lee, Yoshinao Harada, Jung Woo Pyun et al. Appl Phys Lett[J], 2005, 86: 103505
16. Samanta S K, Yoo Won Jong, Samudra Ganesh. Appl Phys Lett[J], 2005, 86: 113110
17. Ishikawa Y, Makita S, Zhang J et al. Jpn J Appl Phys[J], 1999, 38: L789
18. Asuha, Kobayashi T, Maida O et al. Appl Phys Lett[J], 2002, 81: 3410
19. Liss B, Engstromo. J Appl Phys[J], 1995, 78: 1824
20. Nicollian E H, Goetzberger A Bell. Syst Technol J[J], 1967, 46: 1055
21. Huang S, Banerjee S, Tung R T et al. Appl Phys[J], 2003, 93: 76
22. Ioannou-Sougleridis V, Nassiopoulou A G. J Appl Phys[J], 2003, 94: 4084
23. Liu Y, Chen T P, Ding L et al. J Appl Phys[J], 2006, 100: 096111