Coulomb blockade in Sb nanocrystals formed in thin, thermally grown SiO2 layers by low-energy ion implantation

Applied Physics Letters

Volumn 73, Issue 8, 1998, Pages 1071-1073

  Nakajima, Anri ^a   Nakao, Hiroshi ^a   Ueno, Hiroaki ^a   Futatsugi, Toshiro ^a   Yokoyama, Naoki ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000086869     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122087     Document Type: Article

References (8)

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