Microstructure and electrical properties of Sn nanocrystals in thin, thermally grown SiO2 layers formed via low energy ion implantation

Journal of Applied Physics

Volumn 84, Issue 3, 1998, Pages 1316-1320

  Nakajima, Anri ^a,b   Futatsugi, Toshiro ^a   Nakao, Hiroshi ^a   Usuki, Tatsuya ^a   Horiguchi, Naoto ^a   Yokoyama, Naoki ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

^b HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000380639     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368199     Document Type: Article

References (12)

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