Investigation of surface pretreatments on GaAs and memory characteristics of MOS capacitors embedded with Au nano-particles

Microelectronics Reliability

Volumn 52, Issue 11, 2012, Pages 2592-2596

  Chiu, Hsien Chin ^a   Lin, Che Kai ^a   Lin, Chao Wei ^a   Lai, Chao Sung ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AS SPECIES; AU-NANOPARTICLES; C-V MEASUREMENT; CHARGE STORAGE; GAAS; GAAS SUBSTRATES; GATE OXIDE; LARGE HYSTERESIS; METAL OXIDE SEMICONDUCTOR; NARROW SIZE DISTRIBUTIONS; NATIVE OXIDES; NON-VOLATILE MEMORIES; PHOSPHORUS OXIDE; PRE-TREATMENT; SCHOTTKY DIODES; SELF-ASSEMBLED; SURFACE PRE-TREATMENTS; TUNNELING OXIDES; ULTRA-THIN;

DATA STORAGE EQUIPMENT; DIELECTRIC DEVICES; GALLIUM ARSENIDE; MOS CAPACITORS; NANOPARTICLES; PHOSPHORUS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM; SULFUR;

GOLD;

EID: 84867582414     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2012.05.002     Document Type: Article

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