A novel nanowire channel poly-Si TFT functioning as transistor and nonvolatile SONOS memory

IEEE Electron Device Letters

Volumn 28, Issue 9, 2007, Pages 809-811

  Chen, Shih Ching ^a   Chang, Ting Chang ^b   Liu, Po Tsun ^c   Wu, Yung Chun ^a   Lin, Po Shun ^d   Tseng, Bae Heng ^d   Shy, Jang Hung ^d   Sze, S M ^c   Chang, Chun Yen ^c   Lien, Chen Hsin ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

Nanowire (NW); Nonvolatile memory; Polysilicon (poly Si); Silicon oxide nitride oxide silicon (SONOS); Thin film transistor (TFT)

Indexed keywords

BIAS OPERATIONS; CORNER EFFECTS; ELECTRICAL CHARACTERISTICS; MEMORY DEVICES; NANOWIRE (NW); NONVOLATILE; NONVOLATILE MEMORY; POLY-SI TFT; POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS; PROGRAM/ERASE; SILICON-OXIDE-NITRIDE-OXIDE-SILICON (SONOS); SONOS MEMORIES; STACK GATE DIELECTRICS; SUB THRESHOLD SLOPES; THIN-FILM TRANSISTOR (TFT); TRI-GATE STRUCTURES;

CURRENT VOLTAGE CHARACTERISTICS; DRAIN CURRENT; ELECTRIC WIRE; GATE DIELECTRICS; GATES (TRANSISTOR); NANOWIRES; NITRIDES; POLYSILICON; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS;

NONMETALS;

EID: 60049094231     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.903885     Document Type: Article

References (11)

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