SCOPUS 정보 검색 플랫폼

Volumn 102, Issue 20, 2013, Pages

The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory

(14) Huang, Jen Wei a Zhang, Rui b Chang, Ting Chang c,d Tsai, Tsung Ming c Chang, Kuan Chang c Lou, J C b Young, Tai Fa c Chen, Jung Hui e Chen, Hsin Lu c Pan, Yin Chih c Huang, Xuan f Zhang, Fengyan f Syu, Yong En c Sze, Simon M g

a DEPARTMENT OF PHYSICS (Taiwan)

b PEKING UNIVERSITY (China)

c NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

d NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

e NATIONAL KAOHSIUNG NORMAL UNIVERSITY (Taiwan)

f XIAMEN UNIVERSITY (China)

g NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT CONDUCTION MECHANISMS; DEVICE CHARACTERISTICS; ELECTRICAL CHARACTERISTIC; LOW-RESISTANCE STATE; RESISTANCE RANDOM ACCESS MEMORY; RESISTANCE SWITCHING; SPACE-CHARGE-LIMITED CURRENT; UNIFORM DISTRIBUTION;

COMPUTER SOFTWARE; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; HAFNIUM OXIDES;

PERMITTIVITY;

EID: 84878355029 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4807577 Document Type: Article

Times cited : (32)

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