Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors

Solid-State Electronics

Volumn 54, Issue 12, 2010, Pages 1497-1499

  Tsao, S W ^a   Chang, T C ^a,b   Huang, S Y ^a   Chen, M C ^a   Chen, S C ^a   Tsai, C T ^a   Kuo, Y J ^a   Chen, Y C ^a   Wu, W C ^a  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

Hydrogen; Indium gallium zinc oxide; Thin film transistor

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SEMICONDUCTORS; CHEMICAL ANALYSIS; GALLIUM COMPOUNDS; HYDROGEN; II-VI SEMICONDUCTORS; INTERFACE STATES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM CIRCUITS; THIN FILMS; THRESHOLD VOLTAGE; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

AMORPHOUS-INDIUM GALLIUM ZINC OXIDES; CHEMICAL COMPOSITIONS; ELECTRICAL CHARACTERISTIC; INDIUM GALLIUM ZINC OXIDES; INTERFACE TRAP STATE; SUB-THRESHOLD SWING(SS); THRESHOLD VOLTAGE SHIFTS; THRESHOLD VOLTAGES (VTH);

THIN FILM TRANSISTORS;

EID: 77957305503     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.08.001     Document Type: Letter

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