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Volumn 92, Issue 1, 2008, Pages

Tungsten oxide/tungsten nanocrystals for nonvolatile memory devices

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ELECTRON TUNNELING; LAYERED MANUFACTURING; MEAN FIELD THEORY; NANOCRYSTALS; OXIDATION; THERMAL EFFECTS; THRESHOLD VOLTAGE; TUNGSTEN COMPOUNDS;

EID: 38049053446     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2822401     Document Type: Article
Times cited : (29)

References (13)
  • 7
    • 38049002624 scopus 로고
    • Silicide for VLSI Application (Academic, Orlando).
    • S. P. Murarka, Silicide for VLSI Application (Academic, Orlando, 1983).
    • (1983)
    • Murarka, S.P.1
  • 8
    • 38049031329 scopus 로고    scopus 로고
    • Physics of Semiconductor Devices (Wiley, New Jeresy).
    • Simon M. Sze and Kwok K. Ng, Physics of Semiconductor Devices (Wiley, New Jeresy, 2007).
    • (2007)
    • Sze, S.M.1    Ng, K.K.2
  • 10
    • 38049035639 scopus 로고
    • Oxidation of Metals and Alloys (Butterworths, London).
    • O. Kubaschewski and B. E. Hopkins, Oxidation of Metals and Alloys (Butterworths, London, 1953).
    • (1953)
    • Kubaschewski, O.1    Hopkins, B.E.2
  • 11
    • 0021466317 scopus 로고
    • JAPIAU 0021-8979 10.1063/1.333738.
    • R. Beyers, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.333738 56, 147 (1984).
    • (1984) J. Appl. Phys. , vol.56 , pp. 147
    • Beyers, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.