Performance-improved nonvolatile memory with aluminum nanocrystals embedded in Al2O3 for high temperature applications

Journal of Applied Physics

Volumn 110, Issue 10, 2011, Pages

  Xu, Zhongguang ^a   Huo, Zongliang ^a   Zhu, Chenxin ^a   Cui, Yanxiang ^b   Wang, Ming ^a   Zheng, Zhiwei ^a   Liu, Jing ^a   Wang, Yumei ^b   Li, Fanghua ^b   Liu, Ming ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

^b INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NANOCRYSTAL; CHARGE TRAPPING MEMORIES; DATA RETENTION; HIGH TEMPERATURE; HIGH-K DIELECTRIC; MEMORY WINDOW; NON-VOLATILE MEMORIES; NON-VOLATILE MEMORY APPLICATION; PROGRAM/ERASE; ROOM TEMPERATURE;

CHARGE TRAPPING; HIGH TEMPERATURE APPLICATIONS; NANOCRYSTALS; SILICON COMPOUNDS;

ALUMINUM;

EID: 82555192833     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3662944     Document Type: Conference Paper

References (19)

1. See http://www.itrs.net/Links/2010ITRS/2010Update/ToPost/2010Tables-PIDS- FOCUS-C-ITRS.xls E-JAPIAU-110-150122 for information about the International Technology Roadmap for Semiconductors sponsored by the five leading chip manufacturing regions in the world: Europe, Japan, Korea, Taiwan, and the United States
2. H.-W. You and W.-J. Cho, Appl. Phys. Lett. 96, 093506 (2010). 10.1063/1.3337103
3. J. Liu, Q. Wang, S. B. Long, M. H. Zhang, and M. Liu. Semicond. Sci. Technol. 25, 055013 (2010). 10.1088/0268-1242/25/5/055013
4. V. Mikhelashvili, B. Meyler, S. Yofis, Y. Shneider, A. Zeidler, M. Garbrecht, T. Cohen-Hyams, W. D. Kaplan, M. Lisiansky, Y. Roizin, J. Salzman, and G. Eisenstein, Appl. Phys. Lett. 98, 212902 (2011). 10.1063/1.3595484
5. J.-Y. Tseng, C.-W. Cheng, S.-Y. Wang, T.-B. Wu, K.-Y. Hsieh, and R. Liu, Appl. Phys. Lett. 85, 2595 (2004). 10.1063/1.1795976
6. M. Specht, H. Reisinger, F. Hofmann, T. Schulz, E. Landgraf, R. J. Luyken, W. Rosner, and M. Grieb, and L. Risch, Solid-State Electron. 49, 716 (2005). 10.1016/j.sse.2004.09.003 (Pubitemid 40340019)
7. J. J Chang, IEEE Trans. Electron Devices ED-24, 511 (1977). 10.1109/T-ED.1977.18770
8. R. Degraeve, M. Cho, B. Govoreanu, B. Kaczer, M. B. Zahid, J. Van Houdt, M. Jurczak, and G. Groeseneken, Proceedings of the IEEE Int. Electron Devices Meet (IEEE, San Francisco, CA, 2008), pp. 1-4.
9. C. Lee, U. Ganguly, V. Narayanan, T. Hou, J. Kim, and E. C. Kan, IEEE Electron Device Lett. 26, 879 (2005). 10.1109/LED.2005.859625 (Pubitemid 41825089)
10. C.-W. Cheng, Y.-C. Tseng, T.-B. Wu, and L.-J. Chou, J. Mater. Res. 19, 1043 (2004). 10.1557/JMR.2004.0136
11. Z. Liu, C. Lee, V. Narayanan, G. Pei, and E. C. Kan, IEEE Trans. Electron Devices 49, 1606 (2002). 10.1109/TED.2002.802617 (Pubitemid 35017147)
12. See http://srdata.nist.gov/xps/RecomEnergy.aspx?EnergyTypePE E-JAPIAU-110-150122 for information about the NIST X-ray Photoelectron Spectroscopy (XPS) Database that gives easy access to the energies of many photoelectron and Auger-electron spectral lines.
13. J. S. Lee, J. Y. Yang, and J. P. Hong, Appl. Phys. Lett. 95, 052109 (2009). 10.1063/1.3202412
14. R. C. Jeff, Jr., M. Yun, B. Ramalingam, B. Lee, V. Misra, G. Triplett, and S. Gangopadhyay, Appl. Phys. Lett. 99, 072104 (2011). 10.1063/1.3625426
15. S. Tiwari, F. Rana, H. Hanafi, A. Hartsten, E. F. Crabbe, and K. Chan, Appl. Phys. Lett. 68 1377. (1996). 10.1063/1.116085 (Pubitemid 126688256)
16. Yu. N. Novikov, V. A. Gritsenko, and K. A. Nasyrov, Appl. Phys. Lett. 94 222904 (2009). 10.1063/1.3151861
17. C. X. Zhu, Z. L. Huo, Z. G. Xu, M. H. Zhang, Q. Wang, J. Liu, S. B. Long, and M. Liu, Appl. Phys. Lett. 97 253503 (2010). 10.1063/1.3531559
18. C. Sandhya, U. Ganguly, K. K. Singh, P. K. Singh, C. Olsen, S. M. Seutter, R. Hung, G. Conti, K. Ahmed, N. Krishna, J. Vasi, and S. Mahapatra, Proceedings of the IEEE Int. Reliability Physics Symposium. (IEEE, Phoenix, AZ, 2008), p. 406.
19. S. M. Amoroso, A. Mauri, N. Galbiati, C. Scozzari, E. Mascellino, E. Camozzi, A. Rangoni, T. Ghilardi, A. Grossi, P. Tessariol, C. M. Compagnoni, A. Maconi, A. L. Lacaita, A. S. Spinelli, and G. Ghidini, Proceedings of the IEEEInt. Reliability Physics Symposium. (IEEE, Anaheim, CA, 2010), p. 966.