Light-induced instability of an InGaZnO thin film transistor with and without SiOx passivation layer formed by plasma-enhanced-chemical- vapor-deposition

Applied Physics Letters

Volumn 97, Issue 19, 2010, Pages

  Chen, Te Chih ^a   Chang, Ting Chang ^a   Hsieh, Tien Yu ^a   Tsai, Chih Tsung ^a   Chen, Shih Ching ^a   Lin, Chia Sheng ^b   Hung, Ming Chin ^c   Tu, Chun Hao ^c   Chang, Jiun Jye ^c   Chen, Po Lun ^c  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c Advanced Display Technology Research Center   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT OXYGEN; BARRIER LOWERING; IN-VACUUM; INTERFACE STATE; LIGHT ILLUMINATION; OXYGEN DESORPTION; PASSIVATION LAYER; PHOTOEXCITED HOLES; READSORPTION; RECOVERY RATE; SUBTHRESHOLD; THRESHOLD VOLTAGE SHIFTS;

DESORPTION; OXYGEN; PLASMA DEPOSITION; SILICON COMPOUNDS; THIN FILM TRANSISTORS; THIN FILMS; THRESHOLD VOLTAGE; VAPORS;

PASSIVATION;

EID: 78249289429     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3514251     Document Type: Article

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