Effects of N2 plasma pretreatment on the SiN passivation of AlGaN/GaN HEMT

IEEE Electron Device Letters

Volumn 29, Issue 3, 2008, Pages 209-211

  Romero, M F ^a   Jimenez A ^b   Miguel Sanchez J ^a,c   Brana A F ^a   Gonzalez Posada F ^a   Cuerdo, R ^a   Calle, F ^a   Munoz E ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b UNIVERSITY OF ALCALÁ   (Spain)

^c Isofoton SA   (Spain)

Author keywords

AlGaN GaN high electron mobility transistors (HEMTs); Current collapse; GaN MIS; Passivation; Silicon nitride (SiN)

Indexed keywords

ALUMINUM GALLIUM NITRIDE; CHARGE DENSITY; GALLIUM NITRIDE; MIS DEVICES; PASSIVATION; PLASMAS; SILICON NITRIDE;

CURRENT COLLAPSE; GATE LEAKAGE; GATE-LAG EFFECTS; PLASMA PRETREATMENT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 40749096066     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.915568     Document Type: Article

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