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Applied Physics Letters

Volumn 102, Issue 17, 2013, Pages

In situ study of HfO2 atomic layer deposition on InP(100)

(6) Dong, H a Brennan, B a Zhernokletov, D b Kim, J a Hinkle, C L a Wallace, R M a

a The University of Texas at Dallas (United States)

b UNIVERSITY OF TEXAS AT DALLAS (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL STATE; IN-SITU STUDY; INP; INP(100); LOW CONCENTRATIONS; NATIVE OXIDES; P-OXIDE; SITU X-RAY PHOTOELECTRON SPECTROSCOPY;

DEPOSITION; HAFNIUM OXIDES; NOBELIUM; PHOTOELECTRONS; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITION;

EID: 84877281283 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4803486 Document Type: Article

Times cited : (22)

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