Low-leakage-current AlN/GaN MOSHFETs Using Al 2O 3 for increased 2DEG

IEEE Electron Device Letters

Volumn 33, Issue 2, 2012, Pages 212-214

  Huang, Tongde ^a   Zhu, Xueliang ^a   Wong, Ka Ming ^a   Lau, Kei May ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Al 2O 3 passivation; AlN; GaN; heterostructure field effect transistors (HFETs)

Indexed keywords

2-D ELECTRON GAS (2DEG); ACCESS RESISTANCE; ALN; DC CHARACTERISTICS; FOUR-ORDER; GAN; GATE ELECTRODES; GATE LENGTH; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; IDEAL VALUES; MAXIMUM DRAIN CURRENT; METAL-OXIDE-SEMICONDUCTOR HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; MOS-HFETS; OFF-STATE LEAKAGE CURRENT; PASSIVATION LAYER; PEAK EXTRINSIC TRANSCONDUCTANCE; SI SUBSTRATES; SUBTHRESHOLD SLOPE;

DIELECTRIC MATERIALS; DRAIN CURRENT; ELECTRON GAS; GALLIUM NITRIDE; GATE DIELECTRICS; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; PASSIVATION; SEMICONDUCTING SILICON; SILICON NITRIDE; TRANSISTORS;

ALUMINUM;

EID: 84856288618     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2176909     Document Type: Article

References (18)

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