In-situ studies of interfacial bonding of high-κ dielectrics for CMOS beyond 22nm

ECS Transactions

Volumn 16, Issue 5, 2009, Pages 255-271

  Wallace, R M ^a  

^a The University of Texas at Dallas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM OXIDE; CMOS INTEGRATED CIRCUITS; DIELECTRIC DEVICES; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GATE DIELECTRICS; GERMANIUM; HAFNIUM ALLOYS; INDIUM ALLOYS; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR ALLOYS; SURFACE ANALYSIS;

BOND FORMATION; CHANNEL MATERIALS; GERMANATE; IN-SITU METHODS; IN-SITU STUDY; IN-SITU SYNTHESIS; INTERFACIAL BONDING; REACTION MECHANISM;

HIGH-K DIELECTRIC;

EID: 55149123744     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2981608     Document Type: Conference Paper

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