Impact of N 2 plasma power discharge on AlGaN/GaN HEMT performance

IEEE Transactions on Electron Devices

Volumn 59, Issue 2, 2012, Pages 374-379

  Romero, M Ftima ^a,b   Jiménez, Ana ^c   González Posada, Fernando ^a,d   Martín Horcajo, Sara ^a   Calle, Fernando ^a   Muñoz, Elas ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b OTTO VON GUERICKE UNIVERSITY   (Germany)

^c UNIVERSITY OF ALCALÁ   (Spain)

^d CNRS   (France)

Author keywords

AlGaN GaN high electron mobility transistors (HEMTs); passivation; plasma treatment; silicon nitride (SiN); surface

Indexed keywords

ALGAN/GAN; ALGAN/GAN HEMTS; CRITICAL PARAMETER; DIFFERENT MECHANISMS; DISCHARGE POWER; DRAIN-SOURCE CURRENTS; ELECTRICAL CHARACTERISTIC; ELECTRON-GAS DENSITY; GOOD CORRELATIONS; IN-SITU; INTERFACE QUALITY; KELVIN FORCE MICROSCOPY; LOW POWER; MAXIMUM TRANSCONDUCTANCE; PLASMA POWER; PLASMA PRE-TREATMENT; PLASMA TREATMENT; SURFACE ASSESSMENT; TIME CONDITION;

ATOMIC FORCE MICROSCOPY; DRAIN CURRENT; ELECTRIC DISCHARGES; ELECTRON GAS; ELECTRON MOBILITY; GALLIUM NITRIDE; PASSIVATION; PHASE INTERFACES; PLASMA APPLICATIONS; PLASMAS; SILICON NITRIDE; SURFACES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84856236391     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2176947     Document Type: Article

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