Surface cleaning and preparation in AlGaN/GaN-based HEMT processing as assessed by X-ray photoelectron spectroscopy

Applied Surface Science

Volumn 253, Issue 14, 2007, Pages 6185-6190

  González Posada, Fernando ^a   Bardwell, Jennifer A ^b   Moisa, Simona ^b   Haffouz, Soufien ^b   Tang, Haipeng ^b   Braña, Alejandro F ^a   Muñoz, Elías ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

AlGaN; HEMTs; Surface cleanings; Surface treatments; XPS

Indexed keywords

HIGH ELECTRON MOBILITY TRANSISTORS; ORGANIC SOLVENTS; RAPID THERMAL ANNEALING; SURFACE CLEANING; SURFACE TREATMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

ALGAN; BUFFERED OXIDE ETCHED (BOE); PLASMA CLEANING;

ALUMINUM COMPOUNDS;

EID: 34247108619     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2007.01.016     Document Type: Article

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