High-speed AlN/GaN MOS-HFETs with scaled ALD Al2O3 gate insulators

IEEE Electron Device Letters

Volumn 32, Issue 8, 2011, Pages 1062-1064

  Corrion, A L ^a   Shinohara, K ^a   Regan, D ^a   Milosavljevic, I ^a   Hashimoto, P ^a   Willadsen, P J ^a   Schmitz, A ^a   Kim, S J ^a   Butler, C M ^a   Brown, D ^a   Burnham, S D ^a   Micovic, M ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

Al2O3; AlN; atomic layer deposition (ALD); GaN; gate dielectric; heterojunction field effect transistor (HFET); high electron mobility transistor (HEMT); metal organic semiconductor heterojunction field effect transistor (MOS HFET)

Indexed keywords

ALN; ATOMIC LAYER DEPOSITION (ALD); GAN; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); METAL-ORGANIC-SEMICONDUCTOR HETEROJUNCTION FIELD EFFECT TRANSISTOR (MOS-HFET);

ALUMINUM; ATOMIC LAYER DEPOSITION; DIELECTRIC MATERIALS; ELECTRON MOBILITY; GALLIUM NITRIDE; GATES (TRANSISTOR); HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; ORGANIC FIELD EFFECT TRANSISTORS; TRANSISTORS;

GATE DIELECTRICS;

EID: 79960908089     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2155616     Document Type: Article

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