Interface state characterization of ALD-Al 2O 3/GaN and ALD-Al 2O 3/AlGaN/GaN structures

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 9, Issue 6, 2012, Pages 1356-1360

  Hori, Yujin ^a   Mizue, Chihoko ^a   Hashizume, Tamotsu ^a,b  

^a HOKKAIDO UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Al 2O 3; ALD; AlGaN; Interface state; MOS; Surface treatment

Indexed keywords

ALD; ALGAN; C-V MEASUREMENT; CAPACITANCE VOLTAGE MEASUREMENTS; DENSITY OF INTERFACE STATE; INTERFACE STATE DENSITY; LOW DENSITY; MOS; STATE CHARACTERIZATION; STATE DENSITIES;

ATOMIC LAYER DEPOSITION; GALLIUM NITRIDE; INTERFACE STATES; MOS CAPACITORS; SURFACE TREATMENT;

ALUMINUM;

EID: 84862017136     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201100656     Document Type: Article

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