Half-cycle atomic layer deposition reaction studies of Al2 O3 on In0.2 Ga0.8 As (100) surfaces

Applied Physics Letters

Volumn 93, Issue 20, 2008, Pages

  Milojevic, M ^a   Aguirre Tostado, F S ^a   Hinkle, C L ^a   Kim, H C ^a   Vogel, E M ^a   Kim, J ^a   Wallace, R M ^a  

^a The University of Texas at Dallas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ATOMIC LAYER DEPOSITION; ATOMIC PHYSICS; ATOMIC SPECTROSCOPY; ATOMS; CONCENTRATION (PROCESS); GALLIUM; OZONE WATER TREATMENT; PHOTOELECTRON SPECTROSCOPY; PULSED LASER DEPOSITION; SURFACE REACTIONS; THERMOANALYSIS; ARSENIC; BONDING; GALLIUM ALLOYS; SEMICONDUCTING GALLIUM; SULFUR; SURFACE CHEMISTRY;

ATOMIC LAYERS; HALF CYCLES; IN-SITU; INTERFACIAL OXIDES; TRIMETHYL ALUMINUMS; X-RAY PHOTOELECTRON SPECTROSCOPIES;

X RAY PHOTOELECTRON SPECTROSCOPY; ALUMINUM;

ATOMIC LAYERS; CONCOMITANT DECREASES; GAAS(100); PEAK INTENSITIES; PROCESSING STEPS; RELATIVE CONCENTRATIONS; SUBSTRATE SURFACES; SULFUR TREATMENTS; TRIMETHYL ALUMINUMS; VOLATILE REACTIONS; WET CHEMICALS;

EID: 56849122383     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3033404     Document Type: Article

References (36)

1. T. Ito and Y. Sakai, Solid-State Electron. 0038-1101 10.1016/0038- 1101(74)90100-2 17, 751 (1974).
2. M. Passlack, in Materials Fundamentals of Gate Dielectrics, edited by, A. A. Demkov, and, A. Navrotsky, (Springer, Berlin, 2005), pp. 403-467.
3. M. Hong, J. R. Kwo, P. Tsai, Y. Chang, M. Huang, C. Chen, and T. Lin, Jpn. J. Appl. Phys., Part 1 0021-4922 10.1143/JJAP.46.3167 46, 3167 (2007).
4. C. L. Hinkle, A. M. Sonnet, E. M. Vogel, S. McDonnell, G. J. Hughes, M. Milojevic, B. Lee, F. S. Aguirre-Tostado, K. J. Choi, J. Kim, and R. M. Wallace, Appl. Phys. Lett. 0003-6951 10.1063/1.2801512 91, 163512 (2007).
5. S. Tiwari, S. L. Wright, and J. Batey, IEEE Electron Device Lett. 0741-3106 10.1109/55.6954 9, 488 (1988).
6. J. L. Freeouf, D. A. Buchanan, S. L. Wright, T. N. Jackson, J. Batey, B. Robinson, A. Callegari, A. Paccagnella, and J. M. Woodall, J. Vac. Sci. Technol. B 0734-211X 10.1116/1.584979 8, 860 (1990); J. L. Freeouf, D. A. Buchanan, S. L. Wright, T. N. Jackson, and B. Robinson, Appl. Phys. Lett. 57, 1919 (1990).
7. J. Ivanco, T. Kubota, and H. Kobayashi, J. Appl. Phys. 0021-8979 10.1063/1.1873037 97, 073712 (2005).
8. S. Koveshnikov, W. Tsai, I. Ok, J. C. Lee, V. Tokranov, M. Yakimov, and S. Oktyabrsky, Appl. Phys. Lett. 0003-6951 10.1063/1.2164327 88, 022106 (2006).
9. D. J. Webb, J. Fompeyrine, S. Nakagawa, A. Dimoulas, C. Rossel, M. Sousa, R. Germann, S. F. Alvarado, J. P. Locquet, C. Marchiori, H. Siegwart, A. Callegari, E. Kiewra, Y. Sun, J. De Souza, and N. Hoffmann, Microelectron. Eng. 84, 2142 (2007).
10. J. P. de Souza, E. Kiewra, Y. Sun, A. Callegari, D. K. Sadana, G. Shahidi, D. J. Webb, J. Fompeyrine, R. Germann, C. Rossel, and C. Marchiori, Appl. Phys. Lett. 0003-6951 10.1063/1.2912027 92, 153508 (2008).
11. C. L. Hinkle, A. M. Sonnet, E. M. Vogel, S. McDonnell, G. J. Hughes, M. Milojevic, B. Lee, F. S. Aguirre-Tostado, K. J. Choi, H. C. Kim, J. Kim, and R. M. Wallace, Appl. Phys. Lett. 0003-6951 10.1063/1.2883956 92, 071901 (2008).
12. P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, S. N. G. Chu, S. Nakahara, H. -J. L. Gossmann, J. P. Mannaerts, M. Hong, K. K. Ng, and J. Bude, Appl. Phys. Lett. 0003-6951 10.1063/1.1590743 83, 180 (2003).
13. M. L. Huang, Y. C. Chang, C. H. Chang, Y. J. Lee, P. Chang, J. Kwo, T. B. Wu, and M. Hong, Appl. Phys. Lett. 0003-6951 10.1063/1.2146060 87, 252104 (2005).
14. M. M. Frank, G. D. Wilk, D. Starodub, T. Gustafsson, E. Garfunkel, Y. J. Chabal, J. Grazul, and D. A. Muller, Appl. Phys. Lett. 0003-6951 10.1063/1.1899745 86, 152904 (2005).
15. C. H. Chang, Y. K. Chiou, Y. C. Chang, K. Y. Lee, T. D. Lin, T. B. Wu, M. Hong, and J. Kwo, Appl. Phys. Lett. 0003-6951 10.1063/1.2405387 89, 242911 (2006).
16. Intelligent Epitaxy Technologies, http://www.intelliepi.com.
17. M. H. Zhang, M. Oye, B. Cobb, F. Zhu, H. S. Kim, I. J. Ok, J. Hurst, S. Lewis, A. Holmes, J. C. Lee, S. Koveshnikov, W. Tsai, M. Yakimov, V. Torkanov, and S. Oktyabrsky, J. Appl. Phys. 0021-8979 10.1063/1.2432479 101, 034103 (2007).
18. Picosun Oy (http://www.picosun.com).
19. P. Sivasubramani, J. Kim, M. J. Kim, B. E. Gnade, and R. M. Wallace, J. Appl. Phys. 0021-8979 10.1063/1.2743818 101, 114108 (2007).
20. The TMA pulse partial pressure is 300 mbar.
21. J. Schweppe, R. D. Deslattes, T. Mooney, and C. J. Powell, J. Electron Spectrosc. Relat. Phenom. 0368-2048 10.1016/0368-2048(93)02059-U 67, 463 (1994).
22. Omicron Nanotechnology, Gmbh (http://www.omicron.de).
23. " Standard practice for calibration of the electron binding-energy scale of an x-ray photoelectron spectrometer.," ASTM Standard Report No. E2108-05, ASTM International, West Conshohocken, PA, www.astm.org; C. J. Powell, Surf. Interface Anal. 0142-2421 10.1002/sia.740230302 23, 121 (1995); M. P. Seah, I. S. Gilmore, and G. Beamson, Surf. Interface Anal. 0142-2421 10.1002/(SICI)1096-9918(199808)26:9<642::AID-SIA408>3.3.CO;2-V 26, 642 (1998).
24. M. V. Lebedev, D. Ensling, R. Hunger, T. Mayer, and W. Jaegermann, Appl. Surf. Sci. 0169-4332 10.1016/j.apsusc.2004.01.067 229, 226 (2004).
25. F. S. Aguirre-Tostado, M. Milojevic, C. L. Hinkle, E. M. Vogel, R. M. Wallace, S. McDonnell, and G. J. Hughes, Appl. Phys. Lett. 0003-6951 10.1063/1.2919047 92, 171906 (2008).
26. J. F. Moulder, W. F. Stickle, P. E. Sobol, and K. D. Bomben, Handbook of X-ray Photoelectron Spectroscopy (Physical Electronics, Eden Prairie, MN, 1995), pp. 230-232.
27. B. R. Strohmeier, J. Vac. Sci. Technol. A 0734-2101 10.1116/1.576342 7, 3238 (1989).
28. C. L. Hinkle, M. Milojevic, B. Brennan, A. M. Sonnet, F. S. Aguirre-Tostado, G. J. Hughes, E. M. Vogel, and R. M. Wallace, " Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning. " (unpublished).
29. G. Landgren, R. Ludeke, J. F. Morar, Y. Jugnet, and F. J. Himspel, Phys. Rev. B 0163-1829 10.1103/PhysRevB.30.4839 30, 4839 (1984).
30. G. Hollinger, R. Skheyta-Kabbani, and M. Gendry, Phys. Rev. B 0163-1829 10.1103/PhysRevB.49.11159 49, 11159 (1994).
31. J. Ivanco, T. Kubota, and H. Kobayashi, J. Appl. Phys. 0021-8979 10.1063/1.1873037 97, 073712 (2005).
32. S. Arabasz, E. Bergignat, G. Hollinger, and J. Szuber, Appl. Surf. Sci. 0169-4332 10.1016/j.apsusc.2006.03.061 252, 7659 (2006).
33. Z. H. Lu, M. J. Graham, X. H. Feng, and B. X. Yang, Appl. Phys. Lett. 0003-6951 10.1063/1.109201 62, 2932 (1993).
34. For example, As2 O3 melting point ∼313 °C cf. Ga2 O3 melting point >1725 °C; see http://www.webelements.com/.
35. C. Sasaoka, Y. Kato, and A. Usui, Appl. Phys. Lett. 0003-6951 10.1063/1.109410 62, 2338 (1993).
36. R. L. Puurunen, J. Appl. Phys. 0021-8979 10.1063/1.1940727 97, 121301 (2005).