Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials

Nanoscale Research Letters

Volumn 8, Issue 1, 2013, Pages 1-12

  Prakash, Amit ^a   Maikap, Siddheswar ^a   Banerjee, Writam ^a   Jana, Debanjan ^a   Lai, Chao Sung ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

Nanofilament; Oxygen ion migration; Resistive switching; Ti nanolayer

Indexed keywords

ALUMINUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; GADOLINIUM COMPOUNDS; HAFNIUM COMPOUNDS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; IRIDIUM COMPOUNDS; MORPHOLOGY; OXYGEN; SURFACE ROUGHNESS; SWITCHING;

FILAMENTARY CONDUCTION; HIGH-DENSITY APPLICATIONS; NANO LAYERS; NANOFILAMENT; OXYGEN ION MIGRATIONS; RESISTIVE SWITCHING; SURFACE ROUGHNESS AND MORPHOLOGY; SWITCHING CHARACTERISTICS;

TUNGSTEN COMPOUNDS;

ALOX;

EID: 84887296827     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-8-379     Document Type: Article

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