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Volumn 8, Issue 1, 2013, Pages 1-6

Bi-stable resistive switching characteristics in Ti-doped ZnO thin films

Author keywords

Electrodeposition; Nanostructure; Resistive switching

Indexed keywords

BISMUTH COMPOUNDS; CRYSTAL STRUCTURE; ELECTRODEPOSITION; ELECTRODES; II-VI SEMICONDUCTORS; INDIUM COMPOUNDS; MORPHOLOGY; NANOSTRUCTURES; OXIDE FILMS; SWITCHING; TIN OXIDES; TITANIUM OXIDES; ZINC OXIDE;

EID: 84876913567     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-8-154     Document Type: Article
Times cited : (41)

References (33)
  • 1
    • 0000748226 scopus 로고    scopus 로고
    • Electric-pulse-induced reversible resistance change effect in magnetoresistive films
    • Liu SQ, Wu NJ, Ignatiev A: Electric-pulse-induced reversible resistance change effect in magnetoresistive films. Appl Phys Lett 2000, 76(19):2749-2751.
    • (2000) Appl Phys Lett , vol.76 , Issue.19 , pp. 2749-2751
    • Liu, S.Q.1    Wu, N.J.2    Ignatiev, A.3
  • 3
    • 67649496308 scopus 로고    scopus 로고
    • 3/Ti memory device
    • Wu SX, Li XY, Xing XJ, Hu P, Yu YP, Li SW: Resistive dependence of magnetic properties in nonvolatile Ti/Mn: TiO2/SrTi0.993Nb0.007O3/Ti memory device. Appl Phys Lett 2009, 94(25):253504-253506.
    • (2009) Appl Phys Lett , vol.94 , Issue.25 , pp. 253504-253506
    • Wu, S.X.1    Li, X.Y.2    Xing, X.J.3    Hu, P.4    Yu, Y.P.5    Li, S.W.6
  • 4
    • 0001331485 scopus 로고    scopus 로고
    • Reproducible switching effect in thin oxide films for memory applications
    • Beck A, Bednorz JG, Gerber C, Rosse CL, Widmer D: Reproducible switching effect in thin oxide films for memory applications. Appl Phys Lett 2000, 77(1):139-141.
    • (2000) Appl Phys Lett , vol.77 , Issue.1 , pp. 139-141
    • Beck, A.1    Bednorz, J.G.2    Gerber, C.3    Rosse, C.L.4    Widmer, D.5
  • 5
    • 0015127532 scopus 로고
    • Memristor-the missing circuit element
    • Chua L: Memristor-the missing circuit element. IEEE Transactions on Circuits Theory 1971, 18(5):507-519.
    • (1971) IEEE Transactions On Circuits Theory , vol.18 , Issue.5 , pp. 507-519
    • Chua, L.1
  • 6
    • 57349101496 scopus 로고    scopus 로고
    • Transparent resistive random access memory and its characteristics for nonvolatile resistive switching
    • Seo JW, Park JW, Lim KS, Yang JH, Kang SJ: Transparent resistive random access memory and its characteristics for nonvolatile resistive switching. Appl Phys Lett 2008, 93(22):223505-223507.
    • (2008) Appl Phys Lett , vol.93 , Issue.22 , pp. 223505-223507
    • Seo, J.W.1    Park, J.W.2    Lim, K.S.3    Yang, J.H.4    Kang, S.J.5
  • 8
    • 84860739071 scopus 로고    scopus 로고
    • Interface engineering in resistive switching memories
    • Wang S-y, Tseng T-y: Interface engineering in resistive switching memories. Journal of Advanced Dielectrics 2011, 1(2):141-162.
    • (2011) Journal of Advanced Dielectrics , vol.1 , Issue.2 , pp. 141-162
    • Wang, S.-Y.1    Tseng, T.-Y.2
  • 10
    • 33745038459 scopus 로고    scopus 로고
    • Interface resistance switching at a few nanometer thick perovskite manganite active layers
    • Sawa A, Fujii T, Kawasaki M, Tokura Y: Interface resistance switching at a few nanometer thick perovskite manganite active layers. Appl Phys Lett 2006,88:232112-232114.
    • (2006) Appl Phys Lett , vol.88 , pp. 232112-232114
    • Sawa, A.1    Fujii, T.2    Kawasaki, M.3    Tokura, Y.4
  • 11
    • 68249108599 scopus 로고    scopus 로고
    • 2 thin films with embedded Pt nanocrystals
    • Chang W-Y, Cheng K-J, Tsai J-M, Chen H-J: Improvement of resistive switching characteristics inTiO2 thin films with embedded Pt nanocrystals. Appl Phys Lett 2009, 95:042104-042106.
    • (2009) Appl Phys Lett , vol.95 , pp. 042104-042106
    • Chang, W.-Y.1    Cheng, K.-J.2    Tsai, J.-M.3    Chen, H.-J.4
  • 13
    • 34547842595 scopus 로고    scopus 로고
    • Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide
    • Guan W, Long S, Jia R, Liu M: Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide. Appl Phys Lett 2007, 91:062111-062113.
    • (2007) Appl Phys Lett , vol.91 , pp. 062111-062113
    • Guan, W.1    Long, S.2    Jia, R.3    Liu, M.4
  • 14
    • 38349103053 scopus 로고    scopus 로고
    • Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications
    • Chuang WY, Lai YC, Wu TB, Fang SF, Chen F, Tsai M: Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications. J Appl Phys Lett 2008, 92:022110-022112.
    • (2008) J Appl Phys Lett , vol.92 , pp. 022110-022112
    • Chuang, W.Y.1    Lai, Y.C.2    Wu, T.B.3    Fang, S.F.4    Chen, F.5    Tsai, M.6
  • 16
    • 65249125383 scopus 로고    scopus 로고
    • Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application
    • Yang YC, Pan F, Liu Q, Liu M, Zeng F: Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application. Nano Lett 2009, 9:1636-1643.
    • (2009) Nano Lett , vol.9 , pp. 1636-1643
    • Yang, Y.C.1    Pan, F.2    Liu, Q.3    Liu, M.4    Zeng, F.5
  • 17
    • 73649141715 scopus 로고    scopus 로고
    • Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices
    • Lee S, Kim H, Yun DJ, Rhee SW, Yong K: Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices. Appl Phys Lett 2009, 95:262113-262115.
    • (2009) Appl Phys Lett , vol.95 , pp. 262113-262115
    • Lee, S.1    Kim, H.2    Yun, D.J.3    Rhee, S.W.4    Yong, K.5
  • 18
    • 73849145282 scopus 로고    scopus 로고
    • Switching mechanism transition induced by annealing treatment in nonvolatile Cu/ZnO/Cu/ZnO/Pt resistive memory: From carrier trapping/detrapping to electrochemical metallization
    • Yang YC, Pan F, Zeng F, Liu M: Switching mechanism transition induced by annealing treatment in nonvolatile Cu/ZnO/Cu/ZnO/Pt resistive memory: from carrier trapping/detrapping to electrochemical metallization. J Appl Phys 2009, 106:123705-123709.
    • (2009) J Appl Phys , vol.106 , pp. 123705-123709
    • Yang, Y.C.1    Pan, F.2    Zeng, F.3    Liu, M.4
  • 19
    • 77951154098 scopus 로고    scopus 로고
    • Opposite bias polarity dependence of resistive switching in n-type Ga-doped-ZnO and p-type NiO thin films
    • Kinoshtia K, Okutani T, Tanaka H, Hinoki T, Yazawa K, Ohmi K, Kishita S: Opposite bias polarity dependence of resistive switching in n-type Ga-doped-ZnO and p-type NiO thin films. Appl Phys Lett 2010, 96:143505-143507.
    • (2010) Appl Phys Lett , vol.96 , pp. 143505-143507
    • Kinoshtia, K.1    Okutani, T.2    Tanaka, H.3    Hinoki, T.4    Yazawa, K.5    Ohmi, K.6    Kishita, S.7
  • 20
    • 84863351077 scopus 로고    scopus 로고
    • Fabrication and resistive switching characteristics of high compact Ga-doped ZnO nanorod thin film devices
    • Yao I-C, Lee D-Y, Tseng T-Y, Lin P: Fabrication and resistive switching characteristics of high compact Ga-doped ZnO nanorod thin film devices. Nanotechnology 2012, 23:145201-145209.
    • (2012) Nanotechnology , vol.23 , pp. 145201-145209
    • Yao, I.-C.1    Lee, D.-Y.2    Tseng, T.-Y.3    Lin, P.4
  • 21
    • 38749127574 scopus 로고    scopus 로고
    • 2-doped ZnO films prepared by radio-frequency magnetron sputtering
    • Chung J-L, Chen J-C, Tseng C-J: Electrical and optical properties of TiO2-doped ZnO films prepared by radio-frequency magnetron sputtering. J Phys Chem Solids 2008, 69:535-539.
    • (2008) J Phys Chem Solids , vol.69 , pp. 535-539
    • Chung, J.-L.1    Chen, J.-C.2    Tseng, C.-J.3
  • 22
    • 38949085924 scopus 로고    scopus 로고
    • The influence of titanium on the properties of zinc oxide films deposited by radio frequency magnetron sputtering
    • Chung J-L, Chen J-C, Tseng C-J: The influence of titanium on the properties of zinc oxide films deposited by radio frequency magnetron sputtering. Appl Surf Sci 2008, 254:2615-2620.
    • (2008) Appl Surf Sci , vol.254 , pp. 2615-2620
    • Chung, J.-L.1    Chen, J.-C.2    Tseng, C.-J.3
  • 23
    • 56949089717 scopus 로고    scopus 로고
    • 2-doped ZnO films by radio frequency magnetron sputtering in ambient hydrogen-argon gas
    • Chung J-L, Chen J-C, Tseng C-J: Preparation of TiO2-doped ZnO films by radio frequency magnetron sputtering in ambient hydrogen-argon gas. Appl Surf Sci 2008, 255:2494-2499.
    • (2008) Appl Surf Sci , vol.255 , pp. 2494-2499
    • Chung, J.-L.1    Chen, J.-C.2    Tseng, C.-J.3
  • 24
    • 79953210336 scopus 로고    scopus 로고
    • Effects of thickness and annealing on the properties of Ti-doped ZnO films by radio frequency magnetron sputtering
    • Chang H-P, Wang F-H, Chao J-C, Huang C-C, Liu H-W: Effects of thickness and annealing on the properties of Ti-doped ZnO films by radio frequency magnetron sputtering. Curr Appl Phys 2011, 11:S185-S190.
    • (2011) Curr Appl Phys , vol.11
    • Chang, H.-P.1    Wang, F.-H.2    Chao, J.-C.3    Huang, C.-C.4    Liu, H.-W.5
  • 27
    • 0030194256 scopus 로고    scopus 로고
    • XPS and X-ray diffraction studies of aluminum-doped zinc oxide transparent conducting films
    • Islam MN, Ghosh TB, Chopra KL, Acharya HN: XPS and X-ray diffraction studies of aluminum-doped zinc oxide transparent conducting films. Thin Solid Films 1996, 280:20-25.
    • (1996) Thin Solid Films , vol.280 , pp. 20-25
    • Islam, M.N.1    Ghosh, T.B.2    Chopra, K.L.3    Acharya, H.N.4
  • 29
    • 0000343622 scopus 로고    scopus 로고
    • Carrier mobility and density contributions to photoconductivity transients in polycrystalline ZnO films
    • Studenikin SA, Golego N, Cocivera M: Carrier mobility and density contributions to photoconductivity transients in polycrystalline ZnO films. J Appl Phys 2000, 87(5):2413-2422.
    • (2000) J Appl Phys , vol.87 , Issue.5 , pp. 2413-2422
    • Studenikin, S.A.1    Golego, N.2    Cocivera, M.3
  • 31
    • 33645641019 scopus 로고    scopus 로고
    • 3
    • Szot K, Speier W, Bihlmayer G, Waser R: Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3. Nat Mater 2006, 5:312-320.
    • (2006) Nat Mater , vol.5 , pp. 312-320
    • Szot, K.1    Speier, W.2    Bihlmayer, G.3    Waser, R.4
  • 33
    • 85043657856 scopus 로고    scopus 로고
    • Enhancement of Resistance Switching in Electrodeposited Co-ZnO Films
    • Chu D, Younis A, Li S: Enhancement of Resistance Switching in Electrodeposited Co-ZnO Films. ISRN Nanotechnology; 2012:705805.
    • (2012) ISRN Nanotechnology , pp. 705805
    • Chu, D.1    Younis, A.2    Li, S.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.