-
1
-
-
0000748226
-
Electric-pulse-induced reversible resistance change effect in magnetoresistive films
-
Liu SQ, Wu NJ, Ignatiev A: Electric-pulse-induced reversible resistance change effect in magnetoresistive films. Appl Phys Lett 2000, 76(19):2749-2751.
-
(2000)
Appl Phys Lett
, vol.76
, Issue.19
, pp. 2749-2751
-
-
Liu, S.Q.1
Wu, N.J.2
Ignatiev, A.3
-
2
-
-
46749093701
-
Memristive switching mechanism for metal/oxide/metal nanodevices
-
Yang JJ, Pickett MD, Li X, Ohlberg DA, Stewart DR, Stanley Williams R: Memristive switching mechanism for metal/oxide/metal nanodevices. Nat Nano 2008, 3(7):429-433.
-
(2008)
Nat Nano
, vol.3
, Issue.7
, pp. 429-433
-
-
Yang, J.J.1
Pickett, M.D.2
Li, X.3
Ohlberg, D.A.4
Stewart, D.R.5
Stanley Williams, R.6
-
3
-
-
67649496308
-
3/Ti memory device
-
Wu SX, Li XY, Xing XJ, Hu P, Yu YP, Li SW: Resistive dependence of magnetic properties in nonvolatile Ti/Mn: TiO2/SrTi0.993Nb0.007O3/Ti memory device. Appl Phys Lett 2009, 94(25):253504-253506.
-
(2009)
Appl Phys Lett
, vol.94
, Issue.25
, pp. 253504-253506
-
-
Wu, S.X.1
Li, X.Y.2
Xing, X.J.3
Hu, P.4
Yu, Y.P.5
Li, S.W.6
-
4
-
-
0001331485
-
Reproducible switching effect in thin oxide films for memory applications
-
Beck A, Bednorz JG, Gerber C, Rosse CL, Widmer D: Reproducible switching effect in thin oxide films for memory applications. Appl Phys Lett 2000, 77(1):139-141.
-
(2000)
Appl Phys Lett
, vol.77
, Issue.1
, pp. 139-141
-
-
Beck, A.1
Bednorz, J.G.2
Gerber, C.3
Rosse, C.L.4
Widmer, D.5
-
5
-
-
0015127532
-
Memristor-the missing circuit element
-
Chua L: Memristor-the missing circuit element. IEEE Transactions on Circuits Theory 1971, 18(5):507-519.
-
(1971)
IEEE Transactions On Circuits Theory
, vol.18
, Issue.5
, pp. 507-519
-
-
Chua, L.1
-
6
-
-
57349101496
-
Transparent resistive random access memory and its characteristics for nonvolatile resistive switching
-
Seo JW, Park JW, Lim KS, Yang JH, Kang SJ: Transparent resistive random access memory and its characteristics for nonvolatile resistive switching. Appl Phys Lett 2008, 93(22):223505-223507.
-
(2008)
Appl Phys Lett
, vol.93
, Issue.22
, pp. 223505-223507
-
-
Seo, J.W.1
Park, J.W.2
Lim, K.S.3
Yang, J.H.4
Kang, S.J.5
-
7
-
-
43049126833
-
The missing memristor found
-
Strukov DB, Snider GS, Stewart DR, Stanley Williams R: The missing memristor found. Nature 2008, 453(7191):80-83.
-
(2008)
Nature
, vol.453
, Issue.7191
, pp. 80-83
-
-
Strukov, D.B.1
Snider, G.S.2
Stewart, D.R.3
Stanley Williams, R.4
-
8
-
-
84860739071
-
Interface engineering in resistive switching memories
-
Wang S-y, Tseng T-y: Interface engineering in resistive switching memories. Journal of Advanced Dielectrics 2011, 1(2):141-162.
-
(2011)
Journal of Advanced Dielectrics
, vol.1
, Issue.2
, pp. 141-162
-
-
Wang, S.-Y.1
Tseng, T.-Y.2
-
9
-
-
71049184870
-
-
Kyoto, Japan: Symposium on VLSI Technology (IEEE)
-
Gao B, Zhang HW, Yu S, Sun B, Liu LF, Liu XY, Wang Y, Han RQ, Kang JF, Yu B, Wang YY: Oxide-Based RRAM: Uniformity Improvement Using A New Material-Oriented Methodology. Kyoto, Japan: Symposium on VLSI Technology (IEEE); 2009:30-31.
-
(2009)
Oxide-Based RRAM: Uniformity Improvement Using a New Material-Oriented Methodology
, pp. 30-31
-
-
Gao, B.1
Zhang, H.W.2
Yu, S.3
Sun, B.4
Liu, L.F.5
Liu, X.Y.6
Wang, Y.7
Han, R.Q.8
Kang, J.F.9
Yu, B.10
Wang, Y.Y.11
-
10
-
-
33745038459
-
Interface resistance switching at a few nanometer thick perovskite manganite active layers
-
Sawa A, Fujii T, Kawasaki M, Tokura Y: Interface resistance switching at a few nanometer thick perovskite manganite active layers. Appl Phys Lett 2006,88:232112-232114.
-
(2006)
Appl Phys Lett
, vol.88
, pp. 232112-232114
-
-
Sawa, A.1
Fujii, T.2
Kawasaki, M.3
Tokura, Y.4
-
11
-
-
68249108599
-
2 thin films with embedded Pt nanocrystals
-
Chang W-Y, Cheng K-J, Tsai J-M, Chen H-J: Improvement of resistive switching characteristics inTiO2 thin films with embedded Pt nanocrystals. Appl Phys Lett 2009, 95:042104-042106.
-
(2009)
Appl Phys Lett
, vol.95
, pp. 042104-042106
-
-
Chang, W.-Y.1
Cheng, K.-J.2
Tsai, J.-M.3
Chen, H.-J.4
-
12
-
-
78650366326
-
2 thin films with embedded Pt nanocrystals
-
Yoon JH, Kim KM, Lee MH, Kim SK, Kim GH, Song SJ, Seok JY, Hwang CS: Improvement of resistive switching characteristics in TiO2 thin films with embedded Pt nanocrystals. Appl Phys Lett 2010, 97:232904-232906.
-
(2010)
Appl Phys Lett
, vol.97
, pp. 232904-232906
-
-
Yoon, J.H.1
Kim, K.M.2
Lee, M.H.3
Kim, S.K.4
Kim, G.H.5
Song, S.J.6
Seok, J.Y.7
Hwang, C.S.8
-
13
-
-
34547842595
-
Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide
-
Guan W, Long S, Jia R, Liu M: Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide. Appl Phys Lett 2007, 91:062111-062113.
-
(2007)
Appl Phys Lett
, vol.91
, pp. 062111-062113
-
-
Guan, W.1
Long, S.2
Jia, R.3
Liu, M.4
-
14
-
-
38349103053
-
Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications
-
Chuang WY, Lai YC, Wu TB, Fang SF, Chen F, Tsai M: Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications. J Appl Phys Lett 2008, 92:022110-022112.
-
(2008)
J Appl Phys Lett
, vol.92
, pp. 022110-022112
-
-
Chuang, W.Y.1
Lai, Y.C.2
Wu, T.B.3
Fang, S.F.4
Chen, F.5
Tsai, M.6
-
15
-
-
33846968114
-
Electric-pulse-induced reversible resistance in doped zinc oxide thin films
-
Villafuerte M, Heluani SP, Juarez G, Simonelli G, Braunstein G, Duhalde S: Electric-pulse-induced reversible resistance in doped zinc oxide thin films. Appl Phys Lett 2007, 90:052105-052107.
-
(2007)
Appl Phys Lett
, vol.90
, pp. 052105-052107
-
-
Villafuerte, M.1
Heluani, S.P.2
Juarez, G.3
Simonelli, G.4
Braunstein, G.5
Duhalde, S.6
-
16
-
-
65249125383
-
Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application
-
Yang YC, Pan F, Liu Q, Liu M, Zeng F: Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application. Nano Lett 2009, 9:1636-1643.
-
(2009)
Nano Lett
, vol.9
, pp. 1636-1643
-
-
Yang, Y.C.1
Pan, F.2
Liu, Q.3
Liu, M.4
Zeng, F.5
-
17
-
-
73649141715
-
Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices
-
Lee S, Kim H, Yun DJ, Rhee SW, Yong K: Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices. Appl Phys Lett 2009, 95:262113-262115.
-
(2009)
Appl Phys Lett
, vol.95
, pp. 262113-262115
-
-
Lee, S.1
Kim, H.2
Yun, D.J.3
Rhee, S.W.4
Yong, K.5
-
18
-
-
73849145282
-
Switching mechanism transition induced by annealing treatment in nonvolatile Cu/ZnO/Cu/ZnO/Pt resistive memory: From carrier trapping/detrapping to electrochemical metallization
-
Yang YC, Pan F, Zeng F, Liu M: Switching mechanism transition induced by annealing treatment in nonvolatile Cu/ZnO/Cu/ZnO/Pt resistive memory: from carrier trapping/detrapping to electrochemical metallization. J Appl Phys 2009, 106:123705-123709.
-
(2009)
J Appl Phys
, vol.106
, pp. 123705-123709
-
-
Yang, Y.C.1
Pan, F.2
Zeng, F.3
Liu, M.4
-
19
-
-
77951154098
-
Opposite bias polarity dependence of resistive switching in n-type Ga-doped-ZnO and p-type NiO thin films
-
Kinoshtia K, Okutani T, Tanaka H, Hinoki T, Yazawa K, Ohmi K, Kishita S: Opposite bias polarity dependence of resistive switching in n-type Ga-doped-ZnO and p-type NiO thin films. Appl Phys Lett 2010, 96:143505-143507.
-
(2010)
Appl Phys Lett
, vol.96
, pp. 143505-143507
-
-
Kinoshtia, K.1
Okutani, T.2
Tanaka, H.3
Hinoki, T.4
Yazawa, K.5
Ohmi, K.6
Kishita, S.7
-
20
-
-
84863351077
-
Fabrication and resistive switching characteristics of high compact Ga-doped ZnO nanorod thin film devices
-
Yao I-C, Lee D-Y, Tseng T-Y, Lin P: Fabrication and resistive switching characteristics of high compact Ga-doped ZnO nanorod thin film devices. Nanotechnology 2012, 23:145201-145209.
-
(2012)
Nanotechnology
, vol.23
, pp. 145201-145209
-
-
Yao, I.-C.1
Lee, D.-Y.2
Tseng, T.-Y.3
Lin, P.4
-
21
-
-
38749127574
-
2-doped ZnO films prepared by radio-frequency magnetron sputtering
-
Chung J-L, Chen J-C, Tseng C-J: Electrical and optical properties of TiO2-doped ZnO films prepared by radio-frequency magnetron sputtering. J Phys Chem Solids 2008, 69:535-539.
-
(2008)
J Phys Chem Solids
, vol.69
, pp. 535-539
-
-
Chung, J.-L.1
Chen, J.-C.2
Tseng, C.-J.3
-
22
-
-
38949085924
-
The influence of titanium on the properties of zinc oxide films deposited by radio frequency magnetron sputtering
-
Chung J-L, Chen J-C, Tseng C-J: The influence of titanium on the properties of zinc oxide films deposited by radio frequency magnetron sputtering. Appl Surf Sci 2008, 254:2615-2620.
-
(2008)
Appl Surf Sci
, vol.254
, pp. 2615-2620
-
-
Chung, J.-L.1
Chen, J.-C.2
Tseng, C.-J.3
-
23
-
-
56949089717
-
2-doped ZnO films by radio frequency magnetron sputtering in ambient hydrogen-argon gas
-
Chung J-L, Chen J-C, Tseng C-J: Preparation of TiO2-doped ZnO films by radio frequency magnetron sputtering in ambient hydrogen-argon gas. Appl Surf Sci 2008, 255:2494-2499.
-
(2008)
Appl Surf Sci
, vol.255
, pp. 2494-2499
-
-
Chung, J.-L.1
Chen, J.-C.2
Tseng, C.-J.3
-
24
-
-
79953210336
-
Effects of thickness and annealing on the properties of Ti-doped ZnO films by radio frequency magnetron sputtering
-
Chang H-P, Wang F-H, Chao J-C, Huang C-C, Liu H-W: Effects of thickness and annealing on the properties of Ti-doped ZnO films by radio frequency magnetron sputtering. Curr Appl Phys 2011, 11:S185-S190.
-
(2011)
Curr Appl Phys
, vol.11
-
-
Chang, H.-P.1
Wang, F.-H.2
Chao, J.-C.3
Huang, C.-C.4
Liu, H.-W.5
-
27
-
-
0030194256
-
XPS and X-ray diffraction studies of aluminum-doped zinc oxide transparent conducting films
-
Islam MN, Ghosh TB, Chopra KL, Acharya HN: XPS and X-ray diffraction studies of aluminum-doped zinc oxide transparent conducting films. Thin Solid Films 1996, 280:20-25.
-
(1996)
Thin Solid Films
, vol.280
, pp. 20-25
-
-
Islam, M.N.1
Ghosh, T.B.2
Chopra, K.L.3
Acharya, H.N.4
-
28
-
-
0003459529
-
-
Eden Prairie, MN: Perkin-Elmer Corporation
-
Wagner CD, Riggs WM, Davis LE, Moulder JF, Muilenberg GE: Handbook of X-ray Photoelectron Spectroscopy. Eden Prairie, MN: Perkin-Elmer Corporation; 1979:68-69.
-
(1979)
Handbook of X-ray Photoelectron Spectroscopy
, pp. 68-69
-
-
Wagner, C.D.1
Riggs, W.M.2
Davis, L.E.3
Moulder, J.F.4
Muilenberg, G.E.5
-
29
-
-
0000343622
-
Carrier mobility and density contributions to photoconductivity transients in polycrystalline ZnO films
-
Studenikin SA, Golego N, Cocivera M: Carrier mobility and density contributions to photoconductivity transients in polycrystalline ZnO films. J Appl Phys 2000, 87(5):2413-2422.
-
(2000)
J Appl Phys
, vol.87
, Issue.5
, pp. 2413-2422
-
-
Studenikin, S.A.1
Golego, N.2
Cocivera, M.3
-
31
-
-
33645641019
-
3
-
Szot K, Speier W, Bihlmayer G, Waser R: Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3. Nat Mater 2006, 5:312-320.
-
(2006)
Nat Mater
, vol.5
, pp. 312-320
-
-
Szot, K.1
Speier, W.2
Bihlmayer, G.3
Waser, R.4
-
32
-
-
34247561316
-
Effect of top electrode material on resistive switching properties of film memory devices
-
Lin, CY Wu CY, Wu CY, Lee TC, Yang FL, Hu C, Tseng TY: Effect of top electrode material on resistive switching properties of film memory devices. IEEE Electron Device Lett 2007, 28:366-368.
-
(2007)
IEEE Electron Device Lett
, vol.28
, pp. 366-368
-
-
Lin, C.Y.1
Wu, C.Y.2
Wu, C.Y.3
Lee, T.C.4
Yang, F.L.5
Hu, C.6
Tseng, T.Y.7
-
33
-
-
85043657856
-
Enhancement of Resistance Switching in Electrodeposited Co-ZnO Films
-
Chu D, Younis A, Li S: Enhancement of Resistance Switching in Electrodeposited Co-ZnO Films. ISRN Nanotechnology; 2012:705805.
-
(2012)
ISRN Nanotechnology
, pp. 705805
-
-
Chu, D.1
Younis, A.2
Li, S.3
|