Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nanodots

Nanoscale Research Letters

Volumn 7, Issue , 2012, Pages

  Banerjee, Writam ^a   Maikap, Siddheswar ^a   Lai, Chao Sung ^a   Chen, Yi Yan ^b   Tien, Ta Chang ^c   Lee, Heng Yuan ^c   Chen, Wei Su ^c   Chen, Frederick T ^c   Kao, Ming Jer ^c   Tsai, Ming Jinn ^c   Yang, Jer Ren ^b  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Formation polarity; Memory; Nanoscale; Resistive switching

Indexed keywords

ALUMINA; ALUMINUM OXIDE; CAPACITANCE; CHARGE TRAPPING; DATA STORAGE EQUIPMENT; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NANODOTS; PHOTOELECTRON SPECTROSCOPY; RRAM; SWITCHING;

CAPACITANCE-VOLTAGE HYSTERESIS; FORMATION POLARITY; NANO SCALE; NON-VOLATILE MEMORY; OXYGEN ION MIGRATIONS; RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORY;

IRIDIUM COMPOUNDS;

EID: 84859376831     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-7-194     Document Type: Article

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