Reset statistics of nio-based resistive switching memories

IEEE Electron Device Letters

Volumn 32, Issue 11, 2011, Pages 1570-1572

  Long, Shibing ^a   Cagli, Carlo ^b   Ielmini, Daniele ^b   Liu, Ming ^a   Suñé, Jordi ^c  

^a INSTITUTE OF MICROELECTRONICS   (China)

^b POLITECNICO DI MILANO   (Italy)

^c UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

Reset statistics; Resistive random access memory (RRAM)

Indexed keywords

CELL-BASED; CONDUCTIVE FILAMENTS; CUMULATIVE DISTRIBUTION; EXPERIMENTAL OBSERVATION; RESET STATISTICS; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE RANDOM ACCESS MEMORY (RRAM); RESISTIVE SWITCHING MEMORIES; STATISTICAL DISTRIBUTION; THERMAL DISSOLUTION; WEIBULL SLOPE;

DISSOLUTION; WEIBULL DISTRIBUTION;

RANDOM ACCESS STORAGE;

EID: 80054972528     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2163613     Document Type: Article

References (9)

1. R. Waser and M. Aono, "Nanoionics-based resistive switching memories," Nat. Mater., vol. 6, no. 11, pp. 833-840, Nov. 2007. (Pubitemid 350064191)
2. 2-based ReRAM with a Cu nanocrystal insertion layer," IEEE Electron Device Lett., vol. 31, no. 11, pp. 1299-1301, Oct. 2010.
3. F. Nardi, D. Ielmini, C. Cagli, S. Spiga, M. Fanciulli, L. Goux, and D. J. Wouters, "Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories," Solid State Electron., vol. 58, no. 1, pp. 42-47, Apr. 2011.
4. D. Ielmini, C. Cagli, and F. Nardi, "Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories," Nanotechnology, vol. 22, no. 25, pp. 254 022, Jun. 2011.
5. U. Russo, D. Ielmini, C. Cagli, and A. L. Lacaita, "Self-accelerated thermal dissolution model for reset programming in unipolar resistive-switching memory (RRAM) devices," IEEE Trans. Electron Devices, vol. 56, no. 2, pp. 193-200, Feb. 2009.
6. S. Spiga, A. Lamperti, C. Wiemer, M. Perego, E. Cianci, G. Tallarida, H. L. Lu, M. Alia, F. G. Volpe, and M. Fanciulli, "Resistance switching in amorphous and crystalline binary oxides grown by electron beam and atomic layer deposition," Microelectron. Eng., vol. 85, no. 12, pp. 2414-2419, Dec. 2008.
7. J. Suñé, "New physics-based analytic approach to the thin-oxide breakdown statistics," IEEE Electron Device Lett., vol. 22, no. 6, pp. 296-298, Jun. 2001. (Pubitemid 32585000)
8. J. Suñé, S. Tous, and E. Y. Wu, "Analytical cell-based model for the breakdown statistics of multilayer insulator stacks," IEEE Electron Device Lett., vol. 30, no. 12, pp. 1359-1361, Dec. 2009.
9. I. H. Inoue, S. Yasuda, H. Akinaga, and H. Takagi, "Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution," Phys. Rev. B, Condens. Matter, vol. 77, no. 3, pp. 035 105, Jan. 2008.