-
1
-
-
0000108790
-
-
10.1063/1.117421
-
S. Tiwari, F. Rana, K. Chan, L. Shi, and H. Hanafi, Appl. Phys. Lett. 69, 1232 (1996). 10.1063/1.117421
-
(1996)
Appl. Phys. Lett.
, vol.69
, pp. 1232
-
-
Tiwari, S.1
Rana, F.2
Chan, K.3
Shi, L.4
Hanafi, H.5
-
2
-
-
0037112988
-
Three-dimensional self-consistent simulation of the charging time response in silicon nanocrystal flash memories
-
DOI 10.1063/1.1509105
-
J. S. de Sousa, A. V. Thean, J. P. Leburton, and V. N. Freire, J. Appl. Phys. 92, 6182 (2002). 10.1063/1.1509105 (Pubitemid 35445627)
-
(2002)
Journal of Applied Physics
, vol.92
, Issue.10
, pp. 6182-6187
-
-
De Sousa, J.S.1
Thean, A.V.2
Leburton, J.P.3
Freire, V.N.4
-
3
-
-
70350315999
-
-
10.1166/jnn.2009.1186
-
S. Das, R. K. Singha, K. Das, A. Dhar, and S. K. Ray, J. Nanosci. Nanotechnol. 9, 5484 (2009). 10.1166/jnn.2009.1186
-
(2009)
J. Nanosci. Nanotechnol.
, vol.9
, pp. 5484
-
-
Das, S.1
Singha, R.K.2
Das, K.3
Dhar, A.4
Ray, S.K.5
-
4
-
-
0001133378
-
-
10.1063/1.370901
-
K. Choi, V. Ng, S. P. Ng, H. H. Thio, Z. X. Shen, and W. S. Li, J. Appl. Phys. 86, 1398 (1999). 10.1063/1.370901
-
(1999)
J. Appl. Phys.
, vol.86
, pp. 1398
-
-
Choi, K.1
Ng, V.2
Ng, S.P.3
Thio, H.H.4
Shen, Z.X.5
Li, W.S.6
-
5
-
-
36849031697
-
Improved charge injection characteristics of Ge nanocrystals embedded in hafnium oxide for floating gate devices
-
DOI 10.1063/1.2821114
-
S. Das, K. Das, R. K. Singha, A. Dhar, and S. K. Ray, Appl. Phys. Lett. 91, 233118 (2007). 10.1063/1.2821114 (Pubitemid 350234498)
-
(2007)
Applied Physics Letters
, vol.91
, Issue.23
, pp. 233118
-
-
Das, S.1
Das, K.2
Singha, R.K.3
Dhar, A.4
Ray, S.K.5
-
6
-
-
71749109000
-
-
10.1063/1.3259396
-
M. Yang, T. P. Chen, Z. Liu, J. I. Wong, W. L. Zhang, S. Zhang, and Y. Liu, J. Appl. Phys. 106, 103701 (2009). 10.1063/1.3259396
-
(2009)
J. Appl. Phys.
, vol.106
, pp. 103701
-
-
Yang, M.1
Chen, T.P.2
Liu, Z.3
Wong, J.I.4
Zhang, W.L.5
Zhang, S.6
Liu, Y.7
-
7
-
-
79952398634
-
-
10.1166/jnn.2010.1590
-
Y. Liu, T. P. Chen, L. Ding, J. I. Wong, M. Yang, Z. Liu, Y. B. Li, and S. Zhang, J. Nanosci. Nanotechnol. 10, 599 (2010). 10.1166/jnn.2010.1590
-
(2010)
J. Nanosci. Nanotechnol.
, vol.10
, pp. 599
-
-
Liu, Y.1
Chen, T.P.2
Ding, L.3
Wong, J.I.4
Yang, M.5
Liu, Z.6
Li, Y.B.7
Zhang, S.8
-
8
-
-
0036715044
-
Metal nanocrystal memories - Part II: Electrical characteristics
-
DOI 10.1109/TED.2002.802618, PII 1011092002802618
-
Z. Liu, C. Lee, V. Narayanan, G. Pei, and E. C. Kan, IEEE Trans. Electron Devices 49, 1614 (2002). 10.1109/TED.2002.802618 (Pubitemid 35017148)
-
(2002)
IEEE Transactions on Electron Devices
, vol.49
, Issue.9
, pp. 1614-1622
-
-
Liu, Z.1
Lee, C.2
Narayanan, V.3
Pei, G.4
Kan, E.C.5
-
9
-
-
13544264528
-
Self-assembly of Ni nanocrystals on HfO2 and N -assisted Ni confinement for nonvolatile memory application
-
DOI 10.1063/1.1846952, 013107
-
Z. Tan, S. K. Samanta, W. J. Yoo, and S. Lee, Appl. Phys. Lett. 86, 013107 (2005). 10.1063/1.1846952 (Pubitemid 40219488)
-
(2005)
Applied Physics Letters
, vol.86
, Issue.1
, pp. 0131071-0131073
-
-
Tan, Z.1
Samanta, S.K.2
Yoo, W.J.3
Lee, S.4
-
10
-
-
24944554926
-
Tungsten nanocrystals embedded in high- k materials for memory application
-
DOI 10.1063/1.2045555, 113110
-
S. K. Samanta, W. J. Yoo, G. Samudra, E. S. Tok, L. K. Bera, and N. Balasubramanian, Appl. Phys. Lett. 87, 113110 (2005). 10.1063/1.2045555 (Pubitemid 41330897)
-
(2005)
Applied Physics Letters
, vol.87
, Issue.11
, pp. 1-3
-
-
Samanta, S.K.1
Yoo, W.J.2
Samudra, G.3
Tok, E.S.4
Bera, L.K.5
Balasubramanian, N.6
-
11
-
-
38049053446
-
-
10.1063/1.2822401
-
C. H. Chen, T. C. Chang, I. H. Liao, P. B. Xi, J. Hsieh, J. Chen, T. Huang, S. M. Sze, U. S. Chen, and J. R. Chen, Appl. Phys. Lett. 92, 013114 (2008). 10.1063/1.2822401
-
(2008)
Appl. Phys. Lett.
, vol.92
, pp. 013114
-
-
Chen, C.H.1
Chang, T.C.2
Liao, I.H.3
Xi, P.B.4
Hsieh, J.5
Chen, J.6
Huang, T.7
Sze, S.M.8
Chen, U.S.9
Chen, J.R.10
-
12
-
-
60349097574
-
-
10.1063/1.3081042
-
Y. Pei, C. Yin, M. Nishijima, T. Kojima, T. Fukushima, T. Tanaka, and M. Koyanagi, Appl. Phys. Lett. 94, 063108 (2009). 10.1063/1.3081042
-
(2009)
Appl. Phys. Lett.
, vol.94
, pp. 063108
-
-
Pei, Y.1
Yin, C.2
Nishijima, M.3
Kojima, T.4
Fukushima, T.5
Tanaka, T.6
Koyanagi, M.7
-
13
-
-
60449104965
-
-
10.1149/1.3067834
-
H. Kim, S. Woo, H. Kim, S. Bang, Y. Kim, D. Choi, and H. Jeon, Electrochem. Solid-State Lett. 12 (4), H92 (2009). 10.1149/1.3067834
-
(2009)
Electrochem. Solid-State Lett.
, vol.12
, Issue.4
, pp. 92
-
-
Kim, H.1
Woo, S.2
Kim, H.3
Bang, S.4
Kim, Y.5
Choi, D.6
Jeon, H.7
-
14
-
-
67650745565
-
-
10.1063/1.3176411
-
V. Mikhelashvili, B. Meyler, S. Yoffis, J. Salzman, M. Garbrecht, T. Cohen-Hyams, W. D. Kaplan, and G. Eisenstein, Appl. Phys. Lett. 95, 023104 (2009) 10.1063/1.3176411.
-
(2009)
Appl. Phys. Lett.
, vol.95
, pp. 023104
-
-
Mikhelashvili, V.1
Meyler, B.2
Yoffis, S.3
Salzman, J.4
Garbrecht, M.5
Cohen-Hyams, T.6
Kaplan, W.D.7
Eisenstein, G.8
-
15
-
-
70350104940
-
-
10.1063/1.3236632
-
Q. Zuo, S. Long, Q. Liu, S. Zhang, Q. Wang, Y. Li, Y. Wang, and M. Liu, J. Appl. Phys. 106, 073724 (2009). 10.1063/1.3236632
-
(2009)
J. Appl. Phys.
, vol.106
, pp. 073724
-
-
Zuo, Q.1
Long, S.2
Liu, Q.3
Zhang, S.4
Wang, Q.5
Li, Y.6
Wang, Y.7
Liu, M.8
-
16
-
-
34547347636
-
High density Ru nanocrystal deposition for nonvolatile memory applications
-
DOI 10.1063/1.2740351
-
D. B. Farmer and R. G. Gordon, J. Appl. Phys. 101, 124503 (2007). 10.1063/1.2740351 (Pubitemid 47141370)
-
(2007)
Journal of Applied Physics
, vol.101
, Issue.12
, pp. 124503
-
-
Farmer, D.B.1
Gordon, R.G.2
-
17
-
-
75649148190
-
-
10.1063/1.3275346
-
D.-J. Lee, S.-S. Yim, K.-S. Kim, S.-H. Kim, and K.-B. Kim, J. Appl. Phys. 107, 013707 (2010). 10.1063/1.3275346
-
(2010)
J. Appl. Phys.
, vol.107
, pp. 013707
-
-
Lee, D.-J.1
Yim, S.-S.2
Kim, K.-S.3
Kim, S.-H.4
Kim, K.-B.5
-
18
-
-
67651250817
-
-
10.1063/1.3189085
-
Y. Pei, C. Yin, T. Kojima, M. Nishijima, T. Fukushima, T. Tanaka, and M. Koyanagi, Appl. Phys. Lett. 95, 033118 (2009). 10.1063/1.3189085
-
(2009)
Appl. Phys. Lett.
, vol.95
, pp. 033118
-
-
Pei, Y.1
Yin, C.2
Kojima, T.3
Nishijima, M.4
Fukushima, T.5
Tanaka, T.6
Koyanagi, M.7
-
19
-
-
34547479883
-
Physical and electrical characteristics of atomic layer deposited TiN nanocrystal memory capacitors
-
DOI 10.1063/1.2766680
-
S. Maikap, P. J. Tzeng, H. Y. Lee, C. C. Wang, T. C. Tien, L. S. Lee, and M.-J. Tsai, Appl. Phys. Lett. 91, 043114 (2007). 10.1063/1.2766680 (Pubitemid 47174501)
-
(2007)
Applied Physics Letters
, vol.91
, Issue.4
, pp. 043114
-
-
Maikap, S.1
Tzeng, P.J.2
Lee, H.Y.3
Wang, C.C.4
Tien, T.C.5
Lee, L.S.6
Tsai, M.-J.7
-
20
-
-
38749101992
-
-
10.1155/2007/84845
-
A. Korotcov, R.-S. Chen, H.-P. Hsu, Y.-S. Huang, D.-S. Tsai, and K.-K. Tiong, J. Nanomater. 2007, 84845 (2007). 10.1155/2007/84845
-
(2007)
J. Nanomater.
, vol.2007
, pp. 84845
-
-
Korotcov, A.1
Chen, R.-S.2
Hsu, H.-P.3
Huang, Y.-S.4
Tsai, D.-S.5
Tiong, K.-K.6
-
21
-
-
77958033213
-
-
10.1063/1.3498049
-
T. T.-J. Wang, C.-L. Chu, I.-J. Hsieh, and W.-S. Tseng, Appl. Phys. Lett. 97, 143507 (2010). 10.1063/1.3498049
-
(2010)
Appl. Phys. Lett.
, vol.97
, pp. 143507
-
-
Wang, T.T.-J.1
Chu, C.-L.2
Hsieh, I.-J.3
Tseng, W.-S.4
-
23
-
-
59049093079
-
-
10.1016/j.mee.2008.10.008
-
P. Chakraborty, S. S. Mahato, T. K. Maiti, M. K. Bera, C. Mahata, S. K. Samanta, A. Biswas, and C. K. Maiti, Microelectron. Eng. 86, 299 (2009). 10.1016/j.mee.2008.10.008
-
(2009)
Microelectron. Eng.
, vol.86
, pp. 299
-
-
Chakraborty, P.1
Mahato, S.S.2
Maiti, T.K.3
Bera, M.K.4
Mahata, C.5
Samanta, S.K.6
Biswas, A.7
Maiti, C.K.8
-
24
-
-
59349097971
-
-
10.1149/1.3070660
-
S. Maikap, A. Das, T.-Y. Wang, T. C. Tien, and L. B. Chang, J. Electrochem. Soc. 156, K28 (2009). 10.1149/1.3070660
-
(2009)
J. Electrochem. Soc.
, vol.156
, pp. 28
-
-
Maikap, S.1
Das, A.2
Wang, T.-Y.3
Tien, T.C.4
Chang, L.B.5
-
25
-
-
34547296613
-
2 multilayers
-
DOI 10.1063/1.2751579
-
S. Maikap, T. Y. Wang, P. J. Tzeng, C. H. Lin, T. C. Tien, L. S. Lee, J. R. Yang, and M. J. Tsai, Appl. Phys. Lett. 90, 262901 (2007). 10.1063/1.2751579 (Pubitemid 47141120)
-
(2007)
Applied Physics Letters
, vol.90
, Issue.26
, pp. 262901
-
-
Maikap, S.1
Wang, T.-Y.2
Tzeng, P.-J.3
Lin, C.-H.4
Tien, T.C.5
Lee, L.S.6
Yang, J.-R.7
Tsai, M.-J.8
-
27
-
-
78650743422
-
-
10.1063/1.3531559
-
C. Zhu, Z. Huo, Z. Xu, M. Zhang, Q. Wang, J. Liu, S. Long, and M. Liu, Appl. Phys. Lett. 97, 253503 (2010). 10.1063/1.3531559
-
(2010)
Appl. Phys. Lett.
, vol.97
, pp. 253503
-
-
Zhu, C.1
Huo, Z.2
Xu, Z.3
Zhang, M.4
Wang, Q.5
Liu, J.6
Long, S.7
Liu, M.8
-
28
-
-
34547254064
-
x nanocrystals
-
DOI 10.1063/1.2749857
-
S. Maikap, T.-Y. Wang, P. -J. Tzeng, C. H. Lin, L. S. Lee, J. -R. Yang, and M. -J. Tsai, Appl. Phys. Lett. 90, 253108 (2007). 10.1063/1.2749857 (Pubitemid 47141235)
-
(2007)
Applied Physics Letters
, vol.90
, Issue.25
, pp. 253108
-
-
Maikap, S.1
Wang, T.Y.2
Tzeng, P.J.3
Lin, C.H.4
Lee, L.S.5
Yang, J.R.6
Tsai, M.J.7
-
29
-
-
34547842160
-
2 nanocrystal trapping layer for two-bit per cell applications
-
DOI 10.1143/JJAP.46.3291
-
S.-M. Yang, C.-H. Cheng, J.-J. Hung, and T.-F. Lei, Jpn. J. Appl. Phys. 46, 3291 (2007). 10.1143/JJAP.46.3291 (Pubitemid 47245431)
-
(2007)
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
, vol.46
, Issue.6 A
, pp. 3291-3295
-
-
Yang, S.-M.1
Chien, C.-H.2
Huang, J.-J.3
Lei, T.-F.4
-
30
-
-
33947655879
-
2 nanodots for charge-trap flash-memory devices
-
DOI 10.1088/0022-3727/40/5/017, PII S0022372707363882, 017
-
S. Choi, Y.-K. Cha, B.-S. Seo, S. Park, J.-H. Park, S. Shin, K. S. Seol, J.-B. Park, Y.-S. Jung, Y. Park, Y. Park, I.-K. Yoo, and S.-H. Choi, J. Phys. D: Appl. Phys. 40, 1426 (2007). 10.1088/0022-3727/40/5/017 (Pubitemid 46485745)
-
(2007)
Journal of Physics D: Applied Physics
, vol.40
, Issue.5
, pp. 1426-1429
-
-
Choi, S.1
Cha, Y.-K.2
Seo, B.-S.3
Park, S.4
Park, J.-H.5
Shin, S.6
Seol, K.S.7
Park, J.-B.8
Jung, Y.-S.9
Park, Y.10
Park, Y.11
Yoo, I.-K.12
Choi, S.-H.13
|