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Volumn 110, Issue 7, 2011, Pages

Impact of metal nano layer thickness on tunneling oxide and memory performance of core-shell iridium-oxide nanocrystals

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE DIAMETER; CHARGE TRAPPING MEMORIES; CORE-SHELL; ELECTRONS AND HOLES; EQUIVALENT OXIDE THICKNESS; GATE VOLTAGES; HIGH-DENSITY; MEMORY PERFORMANCE; MEMORY SIZE; MEMORY WINDOW; METAL NANOCRYSTALS; NANO LAYERS; OPERATION VOLTAGE; PROGRAM/ERASE; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SMALL SIZE; TUNNELING OXIDES;

EID: 80054983572     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3642961     Document Type: Article
Times cited : (34)

References (32)
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  • 5
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    • Improved charge injection characteristics of Ge nanocrystals embedded in hafnium oxide for floating gate devices
    • DOI 10.1063/1.2821114
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    • Das, S.1    Das, K.2    Singha, R.K.3    Dhar, A.4    Ray, S.K.5
  • 9
    • 13544264528 scopus 로고    scopus 로고
    • Self-assembly of Ni nanocrystals on HfO2 and N -assisted Ni confinement for nonvolatile memory application
    • DOI 10.1063/1.1846952, 013107
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  • 16
    • 34547347636 scopus 로고    scopus 로고
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    • DOI 10.1063/1.2740351
    • D. B. Farmer and R. G. Gordon, J. Appl. Phys. 101, 124503 (2007). 10.1063/1.2740351 (Pubitemid 47141370)
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    • Farmer, D.B.1    Gordon, R.G.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.