Low-power and highly uniform switching in ZrO2-Based ReRAM with a Cu nanocrystal insertion layer

IEEE Electron Device Letters

Volumn 31, Issue 11, 2010, Pages 1299-1301

  Liu, Qi ^a,b   Long, Shibing ^a   Wang, Wei ^c   Tanachutiwat, Sansiri ^c   Li, Yingtao ^a   Wang, Qin ^a   Zhang, Manhong ^a   Huo, Zongliang ^a   Chen, Junning ^b   Liu, Ming ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

^b ANHUI UNIVERSITY   (China)

^c STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

Conductive filament (CF); nanocrystal (NC); resistive random access memory (ReRAM); ZrO2

Indexed keywords

CONDUCTIVE FILAMENTS; FORMATION PROCESS; HIGH UNIFORMITY; INDUCED ELECTRICAL FIELD; INSERTION LAYERS; LOW OPERATING VOLTAGE; LOW POWER; LOW RESET CURRENTS; NON-POLAR; PT ELECTRODE; RESISTANCE SWITCHING; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; RESISTIVE SWITCHING MEMORIES; SWITCHING MECHANISM; SWITCHING THRESHOLD VOLTAGE; ZRO2;

FILAMENTS (LAMP); NANOCRYSTALS; NONVOLATILE STORAGE; PLATINUM; RANDOM ACCESS STORAGE; SWITCHING SYSTEMS; ZIRCONIUM ALLOYS;

SWITCHING;

EID: 78049295581     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2070832     Document Type: Article

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