Field-effect transistors based on two-dimensional materials for logic applications

Chinese Physics B

Volumn 22, Issue 9, 2013, Pages

  Wang, Xin Ran ^a   Shi, Yi ^a   Zhang, Rong ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

field effect transistors; grapheme; MoS2; two dimensional (2D) materials

Indexed keywords

DIRAC POINT; ELECTRON TRANSPORT; FIELD EFFECT TRANSISTOR (FETS); GRAPHEME; LOGIC APPLICATIONS; MOS2; NUMBER OF LAYERS; TWO-DIMENSIONAL MATERIALS;

FIELD EFFECT TRANSISTORS; GRAPHENE; MOLYBDENUM COMPOUNDS; SEMICONDUCTOR DOPING; TWO DIMENSIONAL;

MATERIALS;

EID: 84885096504     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/22/9/098505     Document Type: Review

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