Disorder-induced gap behavior in graphene nanoribbons

Physical Review B - Condensed Matter and Materials Physics

Volumn 81, Issue 11, 2010, Pages

  Gallagher, Patrick ^a   Todd, Kathryn ^a   Goldhaber Gordon, David ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77954343871     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.81.115409     Document Type: Article

References (33)

1. A. H. Castro Neto, F. Guinea, N. M. R. Peres, K. S. Novoselov, and A. K. Geim, Rev. Mod. Phys. 81, 109 (2009). 10.1103/RevModPhys.81.109
2. M. Y. Han, B. Özyilmaz, Y. Zhang, and P. Kim, Phys. Rev. Lett. 98, 206805 (2007). 10.1103/PhysRevLett.98.206805 (Pubitemid 47139572)
3. Z. Chen, Y.-M. Lin, M. J. Rooks, and P. Avouris, Physica E 40, 228 (2007). 10.1016/j.physe.2007.06.020 (Pubitemid 350102338)
4. L. Brey and H. A. Fertig, Phys. Rev. B 73, 235411 (2006). 10.1103/PhysRevB.73.235411 (Pubitemid 44943452)
5. M. Ezawa, Phys. Rev. B 73, 045432 (2006). 10.1103/PhysRevB.73.045432 (Pubitemid 43270706)
6. L. Yang, C. H. Park, Y. W. Son, M. L. Cohen, and S. G. Louie, Phys. Rev. Lett. 99, 186801 (2007). 10.1103/PhysRevLett.99.186801 (Pubitemid 350074449)
7. K. Todd, H.-T. Chou, S. Amasha, and D. Goldhaber-Gordon, Nano Lett. 9, 416 (2009). 10.1021/nl803291b
8. F. Molitor, A. Jacobsen, C. Stampfer, J. Guttinger, T. Ihn, and K. Ensslin, Phys. Rev. B 79, 075426 (2009). 10.1103/PhysRevB.79.075426
9. M. Evaldsson, I. V. Zozoulenko, H. Xu, and T. Heinzel, Phys. Rev. B 78, 161407 (R) (2008). 10.1103/PhysRevB.78.161407
10. E. R. Mucciolo, A. H. Castro Neto, and C. H. Lewenkopf, Phys. Rev. B 79, 075407 (2009). 10.1103/PhysRevB.79.075407
11. C. Stampfer, J. Guttinger, S. Hellmuller, F. Molitor, K. Ensslin, and T. Ihn, Phys. Rev. Lett. 102, 056403 (2009). 10.1103/PhysRevLett.102.056403
12. X. Liu, J. B. Oostinga, A. F. Morpurgo, and L. M. K. Vandersypen, Phys. Rev. B 80, 121407 (R) (2009). 10.1103/PhysRevB.80.121407
13. F. Sols, F. Guinea, and A. H. Castro Neto, Phys. Rev. Lett. 99, 166803 (2007). 10.1103/PhysRevLett.99.166803 (Pubitemid 47587557)
14. K. Nomura and A. H. MacDonald, Phys. Rev. Lett. 98, 076602 (2007). 10.1103/PhysRevLett.98.076602
15. K. Nomura, M. Koshino, and S. Ryu, Phys. Rev. Lett. 99, 146806 (2007). 10.1103/PhysRevLett.99.146806 (Pubitemid 47549446)
16. J. H. Bardarson, J. Tworzydło, P. W. Brouwer, and C. W. J. Beenakker, Phys. Rev. Lett. 99, 106801 (2007). 10.1103/PhysRevLett.99.106801 (Pubitemid 47501106)
17. J.-H. Chen, C. Jang, S. Adam, M. S. Fuhrer, E. D. Williams, and M. Ishigami, Nat. Phys. 4, 377 (2008). 10.1038/nphys935
18. - 1 is typical for the nanoribbon devices that we have fabricated in the past using two steps of lithography with no titanium deposition or titanium etch. Raman spectroscopy revealed no changes in the disorder peak after the titanium deposition and removal and the Raman spectrum did not reveal any differences between the parts of the flake that were once covered with titanium and the parts that were not covered with titanium. Auger measurements from a PHI 700 found no residual titanium to within the sensitivity of the instrument: the titanium signal was the same on all parts of the devices studied, regardless of whether or not titanium had been deposited there to begin with. Based on Auger measurements of a titanium film of known thickness, we estimate that any residual titanium film on our nanoribbons is less than 0.2 nm thick. While this upper bound is rather large, based on all the evidence presented here, we feel that the titanium mask is being sufficiently removed by our etch process and that the amount of residual titanium on our ribbons is much smaller than this upper bound.
19. A. C. Ferrari, Phys. Rev. Lett. 97, 187401 (2006). 10.1103/PhysRevLett. 97.187401 (Pubitemid 44658281)
20. J. Moser, A. Barreiro, and A. Bachtold, Appl. Phys. Lett. 91, 163513 (2007). 10.1063/1.2789673 (Pubitemid 350004075)
21. D. C. Elias, Science 323, 610 (2009). 10.1126/science.1167130
22. K. I. Bolotin, K. J. Sikes, Z. Jiang, M. Klima, G. Fudenberg, J. Hone, P. Kim, and H. L. Stormera, Solid State Commun. 146, 351 (2008). 10.1016/j.ssc.2008.02.024
23. J. Campos-Delgado, Chem. Phys. Lett. 469, 177 (2009). 10.1016/j.cplett.2008.12.082
24. X. Jia, Science 323, 1701 (2009). 10.1126/science.1166862
25. S. Adam, E. H. Hwang, V. M. Galitski, and S. Das Sarma, Proc. Natl. Acad. Sci. U.S.A. 104, 18392 (2007). 10.1073/pnas.0704772104 (Pubitemid 350210707)
26. W. Liang, M. Bockrath, D. Bozovic, J. H. Hafner, M. Tinkham, and H. Park, Nature (London) 411, 665 (2001). 10.1038/35079517 (Pubitemid 32531664)
27. Y. Zhang, V. W. Brar, C. Girit, A. Zettl, and M. F. Crommie, Nat. Phys. 5, 722 (2009). 10.1038/nphys1365
28. E. Rossi and S. Das Sarma, Phys. Rev. Lett. 101, 166803 (2008). 10.1103/PhysRevLett.101.166803
29. W. G. van der Wiel, S. De Franceschi, J. M. Elzerman, T. Fujisawa, S. Tarucha, and L. P. Kouwenhoven, Rev. Mod. Phys. 75, 1 (2002). 10.1103/RevModPhys.75.1
30. Y.-M. Lin, V. Perebeinos, Z. Chen, and P. Avouris, Phys. Rev. B 78, 161409 (R) (2008). 10.1103/PhysRevB.78.161409
31. J.-H. Chen, C. Jang, S. Xiao, M. Ishigami, and M. S. Fuhrer, Nat. Nanotechnol. 3, 206 (2008). 10.1038/nnano.2008.58 (Pubitemid 351499398)
32. X. Li, X. Wang, L. Zhang, S. Lee, and H. Dai, Science 319, 1229 (2008). 10.1126/science.1150878 (Pubitemid 351323015)
33. L. Jiao, L. Zhang, X. Wang, G. Diankov, and H. Dai, Nature (London) 458, 877 (2009). 10.1038/nature07919