Simultaneous nitrogen doping and reduction of graphene oxide

Journal of the American Chemical Society

Volumn 131, Issue 43, 2009, Pages 15939-15944

  Li, Xiaolin ^a   Wang, Hailiang ^a   Robinson, Joshua T ^a   Sanchez, Hernan ^a   Diankov, Georgi ^a   Dai, Hongjie ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING CONFIGURATION; BOND FORMATION; CARBON ATOMS; CHEMICAL METHOD; DIRAC POINT; DOPED SAMPLE; DOPING LEVELS; ELECTRICAL MEASUREMENT; ELECTRON-DOPING; GRAPHENE PLANE; GRAPHENES; HIGHER TEMPERATURES; N-DOPED; N-DOPING; NEGATIVE GATE VOLTAGES; NITROGEN-DOPING; OXYGEN GROUPS; OXYGEN LEVELS; REACTION TEMPERATURE; THERMAL-ANNEALING; THREE-TERMINAL DEVICES; X-RAY PHOTOELECTRON SPECTROSCOPY STUDIES; XPS ANALYSIS; XPS DATA;

ANNEALING; CHEMICAL BONDS; GRAPHITE; OXYGEN; X RAY PHOTOELECTRON SPECTROSCOPY;

DOPING (ADDITIVES);

AMMONIA; CARBONYL DERIVATIVE; EPOXIDE; GRAPHENE; HYDROXYL GROUP; LACTONE; NITROGEN; OXIDE; OXYGEN; PHENOL; QUINONE DERIVATIVE;

ARTICLE; CHEMICAL STRUCTURE; DOPING; ELECTRIC POTENTIAL; HIGH TEMPERATURE; TEMPERATURE SENSITIVITY; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 70350645271     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja907098f     Document Type: Article

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