Controlled chlorine plasma reaction for noninvasive graphene doping

Journal of the American Chemical Society

Volumn 133, Issue 49, 2011, Pages 19668-19671

  Wu, Justin ^a   Xie, Liming ^a   Li, Yanguang ^a   Wang, Hailiang ^a   Ouyang, Yijian ^b   Guo, Jing ^b   Dai, Hongjie ^a  

^a STANFORD UNIVERSITY   (United States)

^b University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO SIMULATIONS; ELECTRICAL MEASUREMENT; FLUORINE PLASMA; FUNCTIONALIZATIONS; GRAPHENE NANORIBBONS; GRAPHENE SHEETS; NON DESTRUCTIVE; P-TYPE DOPING; PLASMA REACTIONS;

CHEMICAL VAPOR DEPOSITION; CHLORINATION; CHLORINE; FLUORINE; HYDROGEN; PLASMAS; REACTION KINETICS; SEMICONDUCTOR DOPING;

GRAPHENE;

CHLORINE; FLUORINE; GRAPHENE; HYDROGEN; NANORIBBON;

ARTICLE; CHEMICAL REACTION; CHEMICAL REACTION KINETICS; CHLORINATION; COMPARATIVE STUDY; CONTROLLED STUDY; DOPING; ELECTRICAL POTENTIAL PARAMETERS; ELECTROCHEMICAL ANALYSIS; PLASMA; REACTION TIME;

EID: 83055165802     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/ja2091068     Document Type: Article

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