Studying the short channel effect in the scaling of the AlGaN/GaN nanowire transistors

Journal of Applied Physics

Volumn 113, Issue 21, 2013, Pages

  Chen, Chin Yi ^a   Wu, Yuh Renn ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CURVE; DRAIN-INDUCED BARRIER LOWERING; DRIFT DIFFUSION; GATE INSULATOR; NANOWIRE TRANSISTORS; SCALING ABILITY; SHORT-CHANNEL EFFECT; SUBTHRESHOLD SWING;

DRAIN CURRENT; HIGH ELECTRON MOBILITY TRANSISTORS; POISSON EQUATION;

NANOWIRES;

EID: 84879344457     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4808241     Document Type: Article

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