Study on the current spreading effect and light extraction enhancement of vertical GaN/InGaN LEDs

IEEE Transactions on Electron Devices

Volumn 59, Issue 2, 2012, Pages 400-407

  Li, Chi Kang ^a   Wu, Yuh Renn ^a  

^a Department of Electrical Engineering   (Taiwan)

Author keywords

Current spreading; droop; efficiency; GaN; InGaN; leakage; light extraction; overflow; vertical light emitting diode (LED)

Indexed keywords

CURRENT SPREADING; DROOP; GAN; INGAN; LIGHT EXTRACTION; OVERFLOW; VERTICAL LIGHT-EMITTING DIODES;

CONVERSION EFFICIENCY; EFFICIENCY; GALLIUM NITRIDE; LEAKAGE (FLUID); LIGHT EMISSION; POISSON EQUATION;

LIGHT EMITTING DIODES;

EID: 84856278917     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2176132     Document Type: Article

References (42)

1. M. H. Crawford, "LEDs for solid-state lighting: Performance challenges and recent advances," IEEE J. Sel. Topics Quantum Electron., vol. 15, no. 4, pp. 1028-1040, Jul. 2009.
2. A. Laubsch, M. Sabathil, J. Baur, M. Peter, and B. Hahn, "High-power and high-efficiency InGaN-based light emitters," IEEE Trans. Electron Devices, vol. 57, no. 1, pp. 79-87, Jan. 2010.
3. A. Keppens, W. R. Ryckaert, G. Deconinck, and P. Hanselaer, "High power light-emitting diode junction temperature determination from current-voltage characteristics," J. Appl. Phys., vol. 104, no. 9, p. 093104, Nov. 2008.
4. Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, "Auger recombination in InGaN measured by photoluminescence," Appl. Phys. Lett., vol. 91, no. 14, p. 141101, Oct. 2007. (Pubitemid 47534188)
5. K. A. Bulashevich and S. Y. Karpov, "Is Auger recombination responsible for the efficiency rollover in III-nitride light-emitting diodes?" Phys. Stat. Sol. (C), vol. 5, no. 6, pp. 2066-2069, May 2008.
6. K. J. Vampola, M. Iza, S. Keller, S. P. DenBaars, and S. Nakamura, "Measurement of electron overflow in 450 nm InGaN light-emitting diode structures," Appl. Phys. Lett., vol. 94, no. 6, p. 061116, Feb. 2009.
7. B. Monemar and B. E. Sernelius, "Defect related issues in the "current roll-off" in InGaN based light emitting diodes," Appl. Phys. Lett., vol. 91, no. 18, p. 181103, Oct. 2007.
8. X. Ni, Q. Fan, R. Shimada, U. Oezguer, and H. Morkoc, "Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells," Appl. Phys. Lett., vol. 93, no. 17, p. 171113, Oct. 2008.
9. J. Piprek, "Efficiency droop in nitride-based light-emitting diodes," Phys. Stat. Sol. (A), vol. 207, no. 10, pp. 2217-2225, Oct. 2010.
10. X. Ni, X. Li, J. Lee, S. Liu, V. Avrutin, U. Ozgur, H. Morkoc, A. Matulionis, T. Paskova, G. Mulholland, and K. R. Evans, "InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes," Appl. Phys. Lett., vol. 97, no. 3, p. 031110, Jul. 2010.
11. Y. Y. Kudryk and A. V. Zinovchuk, "Efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with nonuniform current spreading," Semicond. Sci. Technol., vol. 26, no. 9, p. 095007, Sep. 2011.
12. T. T. Mnatsakanov, M. E. Levinshtein, L. I. Pomortseva, S. N. Yurkov, G. S. Simin, and M. A. Khan, "Carrier mobility model for GaN," Solid State Electron., vol. 47, no. 1, pp. 111-115, Jan. 2003. (Pubitemid 35412264)
13. M. Meneghini, N. Trivellin, G. Meneghesso, E. Zanoni, U. Zehnder, and B. Hahn, "A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes," J. Appl. Phys., vol. 106, no. 11, p. 114508, Dec. 2009.
14. X. Guo and E. F. Schubert, "Current crowding in GaN/InGaN light emitting diodes on insulating substrates," J. Appl. Phys., vol. 90, no. 8, pp. 4191-4195, Oct. 2001. (Pubitemid 33598595)
15. I. Eliashevich, Y. Li, A. Osinsky, C. A. Tran, M. G. Brown, J. Robert, and F. Karlicek, "InGaN blue light-emitting diodes with optimized n-GaN layer," Proc. SPIE, vol. 3621, no. 1, pp. 28-36, 1999.
16. H. Kim, S. J. Park, and H. Hwang, "Effects of current spreading on the performance of GaN-based light-emitting diodes," IEEE Trans. Electron Devices, vol. 48, no. 6, pp. 1065-1069, Jun. 2001. (Pubitemid 32576936)
17. S. Hwang and J. Shim, "A method for current spreading analysis and electrode pattern design in light-emitting diodes," IEEE Trans. Electron Devices, vol. 55, no. 5, pp. 1123-1128, May 2008. (Pubitemid 351689504)
18. M. Maier, K. Koehler, M. Kunzer,W. Pletschen, and J.Wagner, "Reduced nonthermal rollover of wide-well GaInN light-emitting diodes," Appl. Phys. Lett., vol. 94, no. 4, p. 041103, Jan. 2009.
19. Y. L. Li, Y. R. Huang, and Y. H. Lai, "Investigation of efficiency droop behaviors of InGaN/GaN multiple-quantum-well LEDs with various well thicknesses," IEEE J. Sel. Topics Quantum Electron., vol. 15, no. 4, pp. 1128-1131, Jul. 2009.
20. M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, "Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop," Appl. Phys. Lett., vol. 93, no. 4, p. 041102, Jul. 2008.
21. S. Choi, H. J. Kim, S.-S. Kim, J. Liu, J. Kim, J.-H. Ryou, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, "Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer," Appl. Phys. Lett., vol. 96, no. 22, p. 221105, May 2010.
22. C. H. Jang, J. K. Sheu, C. M. Tsai, S. J. Chang, W. C. Lai, M. L. Lee, T. K. Ko, C. F. Shen, and S. C. Shei, "Improved performance of GaNbased blue LEDs with the InGaN insertion layer between theMQW active layer and the n-GaN cladding layer," IEEE J. Quantum Electron., vol. 46, no. 4, pp. 513-517, Apr. 2010.
23. H. H. Huang and Y. R.Wu, "Study of polarization properties of light emitted from a-plane InGaN/GaN quantum well-based light emitting diodes," J. Appl. Phys., vol. 106, no. 2, p. 023106, Jul. 2009.
24. H. H. Huang and Y. R. Wu, "Light emission polarization properties of semipolar InGaN/GaN quantum well," J. Appl. Phys., vol. 107, no. 5, p. 053112, Mar. 2010.
25. R. M. Farrell, P. S. Hsu, D. A. Haeger, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Low-threshold current-density AlGaNcladding-free m-plane InGaN/GaN laser diodes," Appl. Phys. Lett., vol. 96, no. 23, p. 231113, Jun. 2010.
26. T. J. Prosa, P. H. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Atom probe analysis of interfacial abruptness and clustering within a single InxGa1-xN quantum well device on semipolar (10 -1 -1 ) GaN substrate," Appl. Phys. Lett., vol. 98, no. 19, p. 191903, May 2011.
27. H. Zhao, G. Liu, X.-H. Li, G. S. Huang, J. D. Poplawsky, S. T. Penn, V. Dierolf, and N. Tansu, "Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded growthtemperature profile," Appl. Phys. Lett., vol. 95, no. 6, p. 061104, Aug. 2009.
28. H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, "Approaches for high internal quantum efficiency green InGaN lightemitting diodes with large overlap quantum wells," Opt. Express, vol. 19, no. 14, pp. A991-A1007, Jul. 2011.
29. S. Chhajed, W. Lee, J. Cho, E. F. Schubert, and J. K. Kim, "Strong light extraction enhancement in GaInN light-emitting diodes by using selforganized nanoscale patterning of p-type GaN," Appl. Phys. Lett., vol. 98, no. 7, p. 071102, Feb. 2011.
30. T. Ueda, M. Ishida, S. Tamura, Y. Fujimoto, M. Yuri, T. Saito, and D. Ueda, "Vertical InGaN-based blue light emitting diode with plated metal base fabricated using laser lift-off technique," Phys. Stat. Sol. (C), no. 7, pp. 2219-2222, Dec. 2003.
31. L. Zhou, J. E. Epler, M. R. Krames, W. Goetz, M. Gherasimova, Z. Ren, J. Han, M. Kneissl, and N. M. Johnson, "Vertical injection thinfilm AlGaN/AlGaN multiple-quantum-well deep ultraviolet light-emitting diodes," Appl. Phys. Lett., vol. 89, no. 24, p. 241113, Dec. 2006.
32. S. J. Wang, S. L. Chen, K. M. Uang, W. C. Lee, T. M. Chen, C. H. Chen, and B. W. Liou, "The use of transparent conducting indium-zinc oxide film as a current spreading layer for vertical-structured high-power GaNbased light-emitting diodes," IEEE Photon. Technol. Lett., vol. 18, no. 10, pp. 1146-1148, May 2006.
33. T. M. Chen, S. J. Wang, K. M. Uang, H. Y. Kuo, C. C. Tsai, W. C. Lee, and H. Kuan, "Current spreading and blocking designs for improving light output power from the vertical-structured GaN-based light-emitting diodes," IEEE Photon. Technol. Lett., vol. 20, no. 9, pp. 703-705, May 2008. (Pubitemid 351583559)
34. V. Haerle, B. Hahn, S. Kaiser, A. Weimar, D. Eisert, S. Bader, A. Ploessl, and F. Eberhard, "Light extraction technologies for high-efficiency GaInN-LED devices," Proc. SPIE, vol. 4996, no. 1, pp. 133-138, 2003.
35. Y. R. Wu, M. Singh, and J. Singh, "Sources of transconductance collapse in III-V nitrides-Consequences of velocity-field relations and source/ gate design," IEEE Trans. Electron Devices, vol. 52, no. 6, pp. 1048-1054, Jun. 2005. (Pubitemid 40871137)
36. C. I. Huang, H. A. Chin, Y. R. Wu, I. C. Cheng, J. Z. Chen, K. C. Chiu, and T. S. Lin, "Mobility enhancement of polycrystallineMgZnO/ZnO thin film layers with modulation doping and polarization effects," IEEE Trans. Electron Devices, vol. 57, no. 3, pp. 696-703, Mar. 2010.
37. J. Hader, J. V. Moloney, and S.W. Koch, "Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes," Appl. Phys. Lett., vol. 96, no. 22, p. 221106, May 2010.
38. D. Vasileska and S. M. Goodnick, Computational Electronics. San Rafael, CA: Morgan & Claypool Publishers, 2006.
39. C. K. Li and Y. R. Wu, "Current spreading effect in vertical GaN/InGaN LEDs," Proc. SPIE, vol. 7939, no. 1, p. 79392K, 2011.
40. M. V. Bogdanov, K. A. Bulashevich, I. Y. Evstratov, A. I. Zhmakin, and S. Y. Karpov, "Coupled modeling of current spreading, thermal effects and light extraction in III-nitride light-emitting diodes," Semicond. Sci. Technol., vol. 23, no. 12, p. 125023, Dec. 2008.
41. H. Y. Ryu and J. I. Shim, "Effect of current spreading on the efficiency droop of InGaN light-emitting diodes," Opt. Express, vol. 19, no. 4, pp. 2886-2894, Feb. 2011.
42. L. I. Lin, Y. R. Wu, and J. Singh, "A study of the role of dislocation density, indium composition on the radiative efficiency in InGaN/GaN polar and nonpolar light-emitting diodes using drift-diffusion coupled with a Monte Carlo method," J. Appl. Phys., vol. 108, no. 12, p. 124508, Dec. 2010.