Theoretical study of electron confinement in submicrometer GaN HFETs using a thermally self-consistent Monte Carlo method

IEEE Transactions on Electron Devices

Volumn 55, Issue 4, 2008, Pages 945-953

  Sadi, Toufik ^a   Kelsall, Robert W ^a  

^a UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

AlGaN carrier exclusion layers; Electrothermal; GaN heterostructure field effect transistors (HFETs); InGaN back barriers; Monte Carlo (MC); Short channel effects

Indexed keywords

CHARGE CARRIERS; HETEROJUNCTIONS; INTERFACES (MATERIALS); MONTE CARLO METHODS; QUANTUM CONFINEMENT; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EFFECTS;

ELECTRON CONFINEMENT; HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR; SELF-HEATING EFFECT;

FIELD EFFECT TRANSISTORS;

EID: 41949095446     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.916677     Document Type: Article

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