100-nm-Gate (Al,In)N/GaN HEMTs grown on SiC with FT= 144 GHz

IEEE Electron Device Letters

Volumn 31, Issue 4, 2010, Pages 293-295

  Sun, Haifeng ^a   Alt, Andreas R ^a   Benedickter, Hansruedi ^a   Feltin, Eric ^b   Carlin, Jean François ^b   Gonschorek, Marcus ^b   Grandjean, Nicolas ^b   Bolognesi, C R ^a  

^a ETH ZURICH   (Switzerland)

^b EPFL   (Switzerland)

Author keywords

AlInN GaN; High electron mobility transistor (HEMT); Millimeter wave transistors

Indexed keywords

EXTRINSIC TRANSCONDUCTANCE; HIGH RESISTIVITY SILICON; HIGH-ELECTRON-MOBILITY TRANSISTOR (HEMT); MAXIMUM CURRENT DENSITY; PEAK CURRENTS; SEMI-INSULATING; SIC SUBSTRATES;

ALUMINUM; CUTOFF FREQUENCY; GALLIUM; MILLIMETER WAVE DEVICES; MILLIMETER WAVES; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; SUBSTRATES; TRANSISTORS; TRANSPORT PROPERTIES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77950090790     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2039845     Document Type: Article

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