Gate leakage suppression and contact engineering in nitride heterostructures

Journal of Applied Physics

Volumn 94, Issue 9, 2003, Pages 5826-5831

  Wu, Yuh Renn ^a   Singh, Madhusudan ^a   Singh, Jasprit ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CURRENT DENSITY; DIELECTRIC MATERIALS; FERROELECTRIC MATERIALS; GATES (TRANSISTOR); LEAKAGE CURRENTS; OHMIC CONTACTS; POLARIZATION;

TUNNELING CURRENT;

HETEROJUNCTIONS;

EID: 0242721127     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1618926     Document Type: Article

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