Tri-gate normally-off GaN power MISFET

IEEE Electron Device Letters

Volumn 33, Issue 3, 2012, Pages 360-362

  Lu, Bin ^a   Matioli, Elison ^a   Palacios, Toms ^a  

^a USA   (United States)

Author keywords

GaN transistor; normally off; power electronics; tri gate

Indexed keywords

CHANNEL CONTROL; DRAIN LEAKAGE CURRENT; GATE STRUCTURE; MAXIMUM DRAIN CURRENT; METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; NEW DEVICES; NORMALLY-OFF; ON/OFF CURRENT RATIO; ORDERS OF MAGNITUDE; SUBTHRESHOLD SLOPE; TRI-GATE;

LEAKAGE CURRENTS; MISFET DEVICES; POWER ELECTRONICS;

GALLIUM NITRIDE;

EID: 84857450060     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2179971     Document Type: Article

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