InAlN/AlN/GaN HEMTs with regrown ohmic contacts and f T of 370 GHz

IEEE Electron Device Letters

Volumn 33, Issue 7, 2012, Pages 988-990

  Yue, Yuanzheng ^a   Hu, Zongyang ^a   Guo, Jia ^a   Sensale Rodriguez, Berardi ^a   Li, Guowang ^a   Wang, Ronghua ^a   Faria, Faiza ^a   Fang, Tian ^a   Song, Bo ^a   Gao, Xiang ^b   Guo, Shiping ^b   Kosel, Thomas ^a   Snider, Gregory ^a   Fay, Patrick ^a   Jena, Debdeep ^a   Xing, Huili ^a  

^a University of Notre Dame   (United States)

^b IQE INC   (United States)

Author keywords

AlN; cutoff frequency; f T; GaN; high electron mobility transistor (HEMT); InAlN; molecular beam epitaxy (MBE); regrown ohmic contacts; transistor

Indexed keywords

ALN; ALTERNATIVE STRUCTURE; CURRENT GAIN CUTOFF FREQUENCY; DELAY ANALYSIS; ELECTROSTATIC CONTROL; EXTRINSIC TRANSCONDUCTANCE; GAN; GATE DRAIN; GATE LENGTH; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); INALN; ON/OFF CURRENT RATIO; PARASITICS;

CUTOFF FREQUENCY; ELECTRIC CONTACTORS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; SEMICONDUCTING ALUMINUM COMPOUNDS; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84862902263     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2196751     Document Type: Article

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