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Applied Physics Letters

Volumn 101, Issue 18, 2012, Pages

Short channel effects on gallium nitride/gallium oxide nanowire transistors

(7) Yu, J W a Yeh, P C a Wang, S L a Wu, Y R a Mao, M H a Lin, H H a Peng, L H a

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONFINEMENTS; DRAIN FIELDS; ELECTRON VELOCITY; GAN/SAPPHIRE; HIGH-K DIELECTRIC; METAL OXIDE SEMICONDUCTOR; NANOWIRE TRANSISTORS; NEGATIVE CHARGE; POSITIVE CHARGES; SATURATION CURRENT; SHORT-CHANNEL EFFECT; TRANSISTOR GATE LENGTH;

FIELD EFFECT TRANSISTORS; NANOWIRES; POLARIZATION; TRANSPORT PROPERTIES;

THRESHOLD VOLTAGE;

EID: 84868663204 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4764554 Document Type: Article

Times cited : (20)

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